Effects of the Ba3(VO4)2 additions on microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics

Zhiyuan Zhang; Haikui Zhu; Yan Zhang; Yuhang Chen; Zhenxiao Fu; Kun Huang; Qitu Zhang

doi:10.1007/s10854-016-5765-x

Effects of the Ba₃(VO₄)₂ additions on microwave dielectric properties of (Zr_0.8Sn_0.2)TiO₄ ceramics

Zhiyuan Zhang, Haikui Zhu, Yan Zhang, Yuhang Chen, Zhenxiao Fu, Kun Huang, Qitu Zhang

College of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The effects of the Ba₃(VO₄)₂ (BV) additions on the phase composition, microstructures, sintering characteristics and microwave dielectric properties of (Zr_0.8Sn_0.2)TiO₄ (ZST) ceramics are investigated by an X-ray diffractometer, a scanning electron microscope and a network analyzer. The ZST and BV ceramics are all prepared by conventional solid-state method. BV can not only lower the sintering temperatures from 1650 to 1275 °C, but also speed up the grain growth of the ZST ceramics. But excessive additives deteriorate the microstructures and comprehensive properties of samples. As a result, ZST ceramics with 0.5 wt% BV can be well sintered at 1275 °C for 5 h and exhibit excellent microwave dielectric properties of ε_r = 36.6, Q × f = 46,000 GHz and τ_f = 1.47 ppm/°C.

Original language	English
Pages (from-to)	2044-2048
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	28
Issue number	2
DOIs	https://doi.org/10.1007/s10854-016-5765-x
State	Published - 1 Jan 2017

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@article{72472742116143c3aeaa3e5564d9d36c,

title = "Effects of the Ba3(VO4)2 additions on microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics",

abstract = "The effects of the Ba3(VO4)2 (BV) additions on the phase composition, microstructures, sintering characteristics and microwave dielectric properties of (Zr0.8Sn0.2)TiO4 (ZST) ceramics are investigated by an X-ray diffractometer, a scanning electron microscope and a network analyzer. The ZST and BV ceramics are all prepared by conventional solid-state method. BV can not only lower the sintering temperatures from 1650 to 1275 °C, but also speed up the grain growth of the ZST ceramics. But excessive additives deteriorate the microstructures and comprehensive properties of samples. As a result, ZST ceramics with 0.5 wt% BV can be well sintered at 1275 °C for 5 h and exhibit excellent microwave dielectric properties of εr = 36.6, Q × f = 46,000 GHz and τf = 1.47 ppm/°C.",

author = "Zhiyuan Zhang and Haikui Zhu and Yan Zhang and Yuhang Chen and Zhenxiao Fu and Kun Huang and Qitu Zhang",

note = "Publisher Copyright: {\textcopyright} 2016, Springer Science+Business Media New York.",

year = "2017",

month = jan,

day = "1",

doi = "10.1007/s10854-016-5765-x",

language = "英语",

volume = "28",

pages = "2044--2048",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "2",

}

TY - JOUR

T1 - Effects of the Ba3(VO4)2 additions on microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics

AU - Zhang, Zhiyuan

AU - Zhu, Haikui

AU - Zhang, Yan

AU - Chen, Yuhang

AU - Fu, Zhenxiao

AU - Huang, Kun

AU - Zhang, Qitu

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The effects of the Ba3(VO4)2 (BV) additions on the phase composition, microstructures, sintering characteristics and microwave dielectric properties of (Zr0.8Sn0.2)TiO4 (ZST) ceramics are investigated by an X-ray diffractometer, a scanning electron microscope and a network analyzer. The ZST and BV ceramics are all prepared by conventional solid-state method. BV can not only lower the sintering temperatures from 1650 to 1275 °C, but also speed up the grain growth of the ZST ceramics. But excessive additives deteriorate the microstructures and comprehensive properties of samples. As a result, ZST ceramics with 0.5 wt% BV can be well sintered at 1275 °C for 5 h and exhibit excellent microwave dielectric properties of εr = 36.6, Q × f = 46,000 GHz and τf = 1.47 ppm/°C.

AB - The effects of the Ba3(VO4)2 (BV) additions on the phase composition, microstructures, sintering characteristics and microwave dielectric properties of (Zr0.8Sn0.2)TiO4 (ZST) ceramics are investigated by an X-ray diffractometer, a scanning electron microscope and a network analyzer. The ZST and BV ceramics are all prepared by conventional solid-state method. BV can not only lower the sintering temperatures from 1650 to 1275 °C, but also speed up the grain growth of the ZST ceramics. But excessive additives deteriorate the microstructures and comprehensive properties of samples. As a result, ZST ceramics with 0.5 wt% BV can be well sintered at 1275 °C for 5 h and exhibit excellent microwave dielectric properties of εr = 36.6, Q × f = 46,000 GHz and τf = 1.47 ppm/°C.

UR - http://www.scopus.com/inward/record.url?scp=84991109269&partnerID=8YFLogxK

U2 - 10.1007/s10854-016-5765-x

DO - 10.1007/s10854-016-5765-x

M3 - 文章

AN - SCOPUS:84991109269

SN - 0957-4522

VL - 28

SP - 2044

EP - 2048

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 2

ER -

Effects of the Ba₃(VO₄)₂ additions on microwave dielectric properties of (Zr_0.8Sn_0.2)TiO₄ ceramics

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