TY - JOUR
T1 - Low temperature sintering and dielectric properties of Ba3(VO4)2 microwave ceramics using Co2O3 additives
AU - Zhang, Zhiyuan
AU - Zhu, Haikui
AU - Li, Yaoyao
AU - Li, Long
AU - Fu, Zhenxiao
AU - Huang, Kun
AU - Zhang, Qitu
N1 - Publisher Copyright:
© 2017, Springer Science+Business Media, LLC.
PY - 2017/12/1
Y1 - 2017/12/1
N2 - The Ba3(VO4)2–x wt% Co2O3 (x = 0.5–5) ceramics were prepared by the solid state reaction method in order to reduce the sintering temperature. The effects of the Co2O3 additions on the phase composition, microstructures, sintering characteristics and microwave dielectric properties of Ba3(VO4)2 ceramics are investigated by an X-ray diffractometer, a scanning electron microscope and a network analyzer. As a result, the Q × f value of 54,000 GH, the εr of 14.6 and the τf value of +58.5 ppm/°C were obtained in the sample of the Ba3(VO4)2–3 wt% Co2O3 ceramic sintered at the temperature of 925 °C, which is capable to co-fire with electrode metal of high conductivity such as Ag (961 °C). Moreover, the Q × f values of the sample with Co2O3 higher than that of 3 wt% additions decreased because of the formation of Ba2V2O7 phase.
AB - The Ba3(VO4)2–x wt% Co2O3 (x = 0.5–5) ceramics were prepared by the solid state reaction method in order to reduce the sintering temperature. The effects of the Co2O3 additions on the phase composition, microstructures, sintering characteristics and microwave dielectric properties of Ba3(VO4)2 ceramics are investigated by an X-ray diffractometer, a scanning electron microscope and a network analyzer. As a result, the Q × f value of 54,000 GH, the εr of 14.6 and the τf value of +58.5 ppm/°C were obtained in the sample of the Ba3(VO4)2–3 wt% Co2O3 ceramic sintered at the temperature of 925 °C, which is capable to co-fire with electrode metal of high conductivity such as Ag (961 °C). Moreover, the Q × f values of the sample with Co2O3 higher than that of 3 wt% additions decreased because of the formation of Ba2V2O7 phase.
UR - http://www.scopus.com/inward/record.url?scp=85028625330&partnerID=8YFLogxK
U2 - 10.1007/s10854-017-7794-5
DO - 10.1007/s10854-017-7794-5
M3 - 文章
AN - SCOPUS:85028625330
SN - 0957-4522
VL - 28
SP - 18474
EP - 18479
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 24
ER -