2D SnO Nano-Memristor with 2 mV Ultra-Low switching voltage

Duoyi Zhu; Kang Chen; Zhengdong Liu; Yueyue Wu; Keyuan Pan; Zifan Li; Minghua Tang; Juqing Liu

doi:10.1016/j.matlet.2025.138711

2D SnO Nano-Memristor with 2 mV Ultra-Low switching voltage

Duoyi Zhu, Kang Chen, Zhengdong Liu, Yueyue Wu, Keyuan Pan, Zifan Li, Minghua Tang, Juqing Liu

SCHOOL OF FLEXIBLE ELECTRONICS(FUTURE TECHNOLOGIES)|INSTITUTE OF ADVANCED MATERIALS(IAM)

Research output: Contribution to journal › Article › peer-review

Abstract

The miniaturization of switching voltage has been an important driving force behind the development of memristor. Here we synthesized two-dimension (2D) stannous oxide nanofilms on various substrates by Van der Waals exfoliation from bulk liquid metal, with a nanofilm thickness of ∼ 1.88 nm. The synthetic film serves as the memristive medium for a bidirectional volatile memristor, a low-power volatile memristor showcasing an impressively ultra-low switching voltage of 2 mV and a memory unit power consumption in the microwatt range (μW).

Original language	English
Article number	138711
Journal	Materials Letters
Volume	395
DOIs	https://doi.org/10.1016/j.matlet.2025.138711
State	Published - 15 Sep 2025

Keywords

2D material
bidirectional Volatile switching
Liquid metal
resistive random access memory (RRAM)
Stannous oxide

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10.1016/j.matlet.2025.138711

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title = "2D SnO Nano-Memristor with 2 mV Ultra-Low switching voltage",

abstract = "The miniaturization of switching voltage has been an important driving force behind the development of memristor. Here we synthesized two-dimension (2D) stannous oxide nanofilms on various substrates by Van der Waals exfoliation from bulk liquid metal, with a nanofilm thickness of ∼ 1.88 nm. The synthetic film serves as the memristive medium for a bidirectional volatile memristor, a low-power volatile memristor showcasing an impressively ultra-low switching voltage of 2 mV and a memory unit power consumption in the microwatt range (μW).",

keywords = "2D material, bidirectional Volatile switching, Liquid metal, resistive random access memory (RRAM), Stannous oxide",

author = "Duoyi Zhu and Kang Chen and Zhengdong Liu and Yueyue Wu and Keyuan Pan and Zifan Li and Minghua Tang and Juqing Liu",

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T1 - 2D SnO Nano-Memristor with 2 mV Ultra-Low switching voltage

AU - Zhu, Duoyi

AU - Chen, Kang

AU - Liu, Zhengdong

AU - Wu, Yueyue

AU - Pan, Keyuan

AU - Li, Zifan

AU - Tang, Minghua

AU - Liu, Juqing

PY - 2025/9/15

Y1 - 2025/9/15

N2 - The miniaturization of switching voltage has been an important driving force behind the development of memristor. Here we synthesized two-dimension (2D) stannous oxide nanofilms on various substrates by Van der Waals exfoliation from bulk liquid metal, with a nanofilm thickness of ∼ 1.88 nm. The synthetic film serves as the memristive medium for a bidirectional volatile memristor, a low-power volatile memristor showcasing an impressively ultra-low switching voltage of 2 mV and a memory unit power consumption in the microwatt range (μW).

AB - The miniaturization of switching voltage has been an important driving force behind the development of memristor. Here we synthesized two-dimension (2D) stannous oxide nanofilms on various substrates by Van der Waals exfoliation from bulk liquid metal, with a nanofilm thickness of ∼ 1.88 nm. The synthetic film serves as the memristive medium for a bidirectional volatile memristor, a low-power volatile memristor showcasing an impressively ultra-low switching voltage of 2 mV and a memory unit power consumption in the microwatt range (μW).

KW - 2D material

KW - bidirectional Volatile switching

KW - Liquid metal

KW - resistive random access memory (RRAM)

KW - Stannous oxide

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U2 - 10.1016/j.matlet.2025.138711

DO - 10.1016/j.matlet.2025.138711

M3 - 文章

AN - SCOPUS:105004665991

SN - 0167-577X

VL - 395

JO - Materials Letters

JF - Materials Letters

M1 - 138711

ER -

2D SnO Nano-Memristor with 2 mV Ultra-Low switching voltage

Abstract

Keywords

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