A Blockwall-Type Layered Bis(dithiolato)nickelate Radical Salt Exhibiting High- and Two-Dimensional Antiferromagnetic Coupling Feature

Wan Wan Yao, Yin Qian, Xuan Rong Chen, Xiao Ming Ren

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The family of [M(dmit)2]- salts (dmit2- = 2-thioxo-1,3-dithiole-4,5-dithiolate; M = Ni, Pd and Pt) generally show novel magnetic, electric, magnetoelectric and photoelectric properties. Herein, a blockwall-type layered [Me3S][Ni(dmit)2] radical salt (1; Me3S+ = trimethylsulfonium) was prepared and characterized by microanalysis, IR spectroscopy, thermal analysis, powder and single crystal X-ray diffraction techniques. Salt 1 crystalizes in triclinic space group P-1, with two pairs of [Ni(dmit)2]- and Me3S+ ions in an asymmetric unit. The anions form blockwall-type monolayer, being parallel to crystallographic (0 1 1) plane, and the cations are accommodated in the spaces of anion monolayer. Salt 1 features a two-dimensional S = ½ antiferromagnetic (AFM) spin system with θ = -97.8(1) K and a semiconductor with σ ≈ 10-4 S·cm-1 and activation energy Ea = 0.24(1) eV in 308—368 K. 1 shows two-step dielectric relaxations ranged from 173—373 K and 1—107 Hz for the dipole motions of two different polar cations. Most importantly, the dielectric constant of 1 reaches to ~17, with high-κ nature. This study suggests the possibility of achieving high-κ materials by introducing polar and low rotation barrier components into van der Waals crystal and high-κ [Ni(dmit)2]--based electrode materials for applications in supercapacitors.

Original languageEnglish
Pages (from-to)794-800
Number of pages7
JournalChinese Journal of Chemistry
Volume40
Issue number7
DOIs
StatePublished - 1 Apr 2022

Keywords

  • Magnetic properties
  • Metal-dithiolene complex
  • Radical ions
  • Semiconductors
  • high-κ

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