Adjustable effects of zinc substitution for indium on the thermoelectric properties of p-type CuInSe2.02

Nannan Yang; Changchun Chen; Lin Pan; Yaqing Zhao; Yifeng Wang

doi:10.1016/j.jallcom.2020.156410

Adjustable effects of zinc substitution for indium on the thermoelectric properties of p-type CuInSe_2.02

Nannan Yang, Changchun Chen, Lin Pan, Yaqing Zhao, Yifeng Wang

College of Materials Science and Engineering

Nanjing Tech University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

In this study, the thermoelectric properties of Zn-doped CuInSe_2.02 (CuIn_1-xZn_xSe_2.02, x = 0, 0.01, 0.02, 0.03, 0.05, 0.07) at the temperatures from 323 K to 773 K have been investigated. The results indicate that small amount of Zn substitution for In could increase the electrical conductivity and Seebeck coefficient simultaneously, lead to a high power factor of 0.21 mW m⁻¹ K⁻² for CuIn_0.98Zn_0.02Se_2.02 at 430 K. In addition, the thermal conductivity of Zn-doped CuInSe_2.02 bulk materials have a slight suppression. Thus, the CuIn_0.98Zn_0.02Se_2.02 achieves the highest peak ZT of 0.18 at 773 K due to the synergistically optimized electrical and thermal transport properties, which is twice larger than that of pristine CuInSe_2.02. The present work indicates that the substitution of In by Zn would be a promising means to improve thermoelectric properties of CuInSe_2.02.

Original language	English
Article number	156410
Journal	Journal of Alloys and Compounds
Volume	847
DOIs	https://doi.org/10.1016/j.jallcom.2020.156410
State	Published - 20 Dec 2020

Keywords

CuInSe
Doping
Thermoelectric

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10.1016/j.jallcom.2020.156410

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title = "Adjustable effects of zinc substitution for indium on the thermoelectric properties of p-type CuInSe2.02",

abstract = "In this study, the thermoelectric properties of Zn-doped CuInSe2.02 (CuIn1-xZnxSe2.02, x = 0, 0.01, 0.02, 0.03, 0.05, 0.07) at the temperatures from 323 K to 773 K have been investigated. The results indicate that small amount of Zn substitution for In could increase the electrical conductivity and Seebeck coefficient simultaneously, lead to a high power factor of 0.21 mW m−1 K−2 for CuIn0.98Zn0.02Se2.02 at 430 K. In addition, the thermal conductivity of Zn-doped CuInSe2.02 bulk materials have a slight suppression. Thus, the CuIn0.98Zn0.02Se2.02 achieves the highest peak ZT of 0.18 at 773 K due to the synergistically optimized electrical and thermal transport properties, which is twice larger than that of pristine CuInSe2.02. The present work indicates that the substitution of In by Zn would be a promising means to improve thermoelectric properties of CuInSe2.02.",

keywords = "CuInSe, Doping, Thermoelectric",

author = "Nannan Yang and Changchun Chen and Lin Pan and Yaqing Zhao and Yifeng Wang",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = dec,

day = "20",

doi = "10.1016/j.jallcom.2020.156410",

language = "英语",

volume = "847",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Adjustable effects of zinc substitution for indium on the thermoelectric properties of p-type CuInSe2.02

AU - Yang, Nannan

AU - Chen, Changchun

AU - Pan, Lin

AU - Zhao, Yaqing

AU - Wang, Yifeng

PY - 2020/12/20

Y1 - 2020/12/20

N2 - In this study, the thermoelectric properties of Zn-doped CuInSe2.02 (CuIn1-xZnxSe2.02, x = 0, 0.01, 0.02, 0.03, 0.05, 0.07) at the temperatures from 323 K to 773 K have been investigated. The results indicate that small amount of Zn substitution for In could increase the electrical conductivity and Seebeck coefficient simultaneously, lead to a high power factor of 0.21 mW m−1 K−2 for CuIn0.98Zn0.02Se2.02 at 430 K. In addition, the thermal conductivity of Zn-doped CuInSe2.02 bulk materials have a slight suppression. Thus, the CuIn0.98Zn0.02Se2.02 achieves the highest peak ZT of 0.18 at 773 K due to the synergistically optimized electrical and thermal transport properties, which is twice larger than that of pristine CuInSe2.02. The present work indicates that the substitution of In by Zn would be a promising means to improve thermoelectric properties of CuInSe2.02.

AB - In this study, the thermoelectric properties of Zn-doped CuInSe2.02 (CuIn1-xZnxSe2.02, x = 0, 0.01, 0.02, 0.03, 0.05, 0.07) at the temperatures from 323 K to 773 K have been investigated. The results indicate that small amount of Zn substitution for In could increase the electrical conductivity and Seebeck coefficient simultaneously, lead to a high power factor of 0.21 mW m−1 K−2 for CuIn0.98Zn0.02Se2.02 at 430 K. In addition, the thermal conductivity of Zn-doped CuInSe2.02 bulk materials have a slight suppression. Thus, the CuIn0.98Zn0.02Se2.02 achieves the highest peak ZT of 0.18 at 773 K due to the synergistically optimized electrical and thermal transport properties, which is twice larger than that of pristine CuInSe2.02. The present work indicates that the substitution of In by Zn would be a promising means to improve thermoelectric properties of CuInSe2.02.

KW - CuInSe

KW - Doping

KW - Thermoelectric

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U2 - 10.1016/j.jallcom.2020.156410

DO - 10.1016/j.jallcom.2020.156410

M3 - 文章

AN - SCOPUS:85089182817

SN - 0925-8388

VL - 847

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 156410

ER -

Adjustable effects of zinc substitution for indium on the thermoelectric properties of p-type CuInSe_2.02

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Keywords

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