Anisotropic Cu@Cu-BTC core-shell nanostructure for memory device

Yiqi Luo; Zhengdong Liu; Geng Wu; Guanzhong Wang; Tingting Chao; Hai Li; Juqing Liu; Xun Hong

doi:10.1016/j.cclet.2018.11.008

Anisotropic Cu@Cu-BTC core-shell nanostructure for memory device

Yiqi Luo, Zhengdong Liu, Geng Wu, Guanzhong Wang, Tingting Chao, Hai Li, Juqing Liu, Xun Hong

SCHOOL OF FLEXIBLE ELECTRONICS(FUTURE TECHNOLOGIES)|INSTITUTE OF ADVANCED MATERIALS(IAM)

University of Science and Technology of China

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The activity and stability of Cu nanostructures strongly depend on their sizes, morphology and structures. Here we report the preparation of two-dimensional (2D) Cu@Cu-BTC core-shell nanosheets (NSs). The thickness of the Cu NSs could be tuned to sub-10 nm through a mild etching process, in which the Cu-BTC in situ grow along with the oxidation on the surface of the Cu NSs. This unique strategy can also be extended to synthesize one-dimensional (1D) Cu@Cu-BTC nanowires (NWs). Furthermore, the obtained Cu@Cu-BTC NSs could be applied as an effective material to the memory device with the write-once-read-many times (WORM) behavior and the high I _ON /I _OFF ratio (>2.7 × 10 ³ ).

Original language	English
Pages (from-to)	1093-1096
Number of pages	4
Journal	Chinese Chemical Letters
Volume	30
Issue number	5
DOIs	https://doi.org/10.1016/j.cclet.2018.11.008
State	Published - May 2019

Keywords

Anisotropic
Copper
Core-shell
MOF
Memory device

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10.1016/j.cclet.2018.11.008

Cite this

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title = "Anisotropic Cu@Cu-BTC core-shell nanostructure for memory device",

abstract = " The activity and stability of Cu nanostructures strongly depend on their sizes, morphology and structures. Here we report the preparation of two-dimensional (2D) Cu@Cu-BTC core-shell nanosheets (NSs). The thickness of the Cu NSs could be tuned to sub-10 nm through a mild etching process, in which the Cu-BTC in situ grow along with the oxidation on the surface of the Cu NSs. This unique strategy can also be extended to synthesize one-dimensional (1D) Cu@Cu-BTC nanowires (NWs). Furthermore, the obtained Cu@Cu-BTC NSs could be applied as an effective material to the memory device with the write-once-read-many times (WORM) behavior and the high I ON /I OFF ratio (>2.7 × 10 3 ).",

keywords = "Anisotropic, Copper, Core-shell, MOF, Memory device",

author = "Yiqi Luo and Zhengdong Liu and Geng Wu and Guanzhong Wang and Tingting Chao and Hai Li and Juqing Liu and Xun Hong",

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doi = "10.1016/j.cclet.2018.11.008",

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TY - JOUR

T1 - Anisotropic Cu@Cu-BTC core-shell nanostructure for memory device

AU - Luo, Yiqi

AU - Liu, Zhengdong

AU - Wu, Geng

AU - Wang, Guanzhong

AU - Chao, Tingting

AU - Li, Hai

AU - Liu, Juqing

AU - Hong, Xun

PY - 2019/5

Y1 - 2019/5

N2 - The activity and stability of Cu nanostructures strongly depend on their sizes, morphology and structures. Here we report the preparation of two-dimensional (2D) Cu@Cu-BTC core-shell nanosheets (NSs). The thickness of the Cu NSs could be tuned to sub-10 nm through a mild etching process, in which the Cu-BTC in situ grow along with the oxidation on the surface of the Cu NSs. This unique strategy can also be extended to synthesize one-dimensional (1D) Cu@Cu-BTC nanowires (NWs). Furthermore, the obtained Cu@Cu-BTC NSs could be applied as an effective material to the memory device with the write-once-read-many times (WORM) behavior and the high I ON /I OFF ratio (>2.7 × 10 3 ).

AB - The activity and stability of Cu nanostructures strongly depend on their sizes, morphology and structures. Here we report the preparation of two-dimensional (2D) Cu@Cu-BTC core-shell nanosheets (NSs). The thickness of the Cu NSs could be tuned to sub-10 nm through a mild etching process, in which the Cu-BTC in situ grow along with the oxidation on the surface of the Cu NSs. This unique strategy can also be extended to synthesize one-dimensional (1D) Cu@Cu-BTC nanowires (NWs). Furthermore, the obtained Cu@Cu-BTC NSs could be applied as an effective material to the memory device with the write-once-read-many times (WORM) behavior and the high I ON /I OFF ratio (>2.7 × 10 3 ).

KW - Anisotropic

KW - Copper

KW - Core-shell

KW - MOF

KW - Memory device

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DO - 10.1016/j.cclet.2018.11.008

M3 - 文章

AN - SCOPUS:85059802785

SN - 1001-8417

VL - 30

SP - 1093

EP - 1096

JO - Chinese Chemical Letters

JF - Chinese Chemical Letters

IS - 5

ER -

Anisotropic Cu@Cu-BTC core-shell nanostructure for memory device

Abstract

Keywords

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