TY - JOUR
T1 - Construction and fabrication of Zn(In0.1Ga0.9)2O4/NH2-MIL-125(Ti-Zr) composite materials with S-scheme heterojunction for highly efficient photocatalytic degradation of organic pollutants
AU - Huang, Zhixiong
AU - Shu, Lingxiu
AU - Chen, Changchun
AU - Shi, Yupeng
AU - Cui, Chenxi
AU - Guan, Zishen
AU - Wang, Yifeng
AU - Pan, Lin
N1 - Publisher Copyright:
© 2025 Elsevier Ltd
PY - 2025/11/1
Y1 - 2025/11/1
N2 - The effective degradation of organic dyes and tetracycline in wastewater is crucial for environmental protection. Currently, photocatalytic degradation using S-scheme heterojunction catalysts represents an efficient solution. In this study, we employed doping engineering by partially substituting Ga3+ with In3+ in ZnGa2O4 and Ti4+ with Zr4+ in NH2-MIL-125(Ti) to modulate their band edge positions and bandgaps. This approach successfully constructed an S-scheme Zn(In0.1Ga0.9)2O4/NH2-MIL-125(Ti-Zr) composite photocatalyst with enhanced built-in electric field. The composite photocatalysts were synthesized via a hydrothermal together with a solvothermal method. Field emission SEM images of the samples showed that the disc-shaped NH2-MIL-125(Ti-Zr) was effectively attached to the irregular small particles of Zn(In0.1Ga0.9)2O4. The existence of an S-scheme heterojunction at the interface of Zn(In0.1Ga0.9)2O4 and NH2-MIL-125 (Ti-Zr) was confirmed through various characterization techniques, including photoelectrochemical tests, XPS analysis, and free radical trapping experiments. As demonstrated by photocatalytic experiments, the NZ-20 % composite has the highest photocatalytic activity and good stability. The degradation efficiencies for Rh. B and tetracycline over the NZ-20 % composite sample under solar light irradiation for 90 min are 96.3 % and 88.5 %, respectively. Additionally, the response surface methodology (RSM) was employed to analyze the key factors affecting the photocatalytic degradation of organic pollutants, namely pH value, temperature, and contaminant level. All in all, this work presents a potential strategy to fabricate superior composite photocatalysts with S-scheme heterojunctions for combating environmental pollution challenges.
AB - The effective degradation of organic dyes and tetracycline in wastewater is crucial for environmental protection. Currently, photocatalytic degradation using S-scheme heterojunction catalysts represents an efficient solution. In this study, we employed doping engineering by partially substituting Ga3+ with In3+ in ZnGa2O4 and Ti4+ with Zr4+ in NH2-MIL-125(Ti) to modulate their band edge positions and bandgaps. This approach successfully constructed an S-scheme Zn(In0.1Ga0.9)2O4/NH2-MIL-125(Ti-Zr) composite photocatalyst with enhanced built-in electric field. The composite photocatalysts were synthesized via a hydrothermal together with a solvothermal method. Field emission SEM images of the samples showed that the disc-shaped NH2-MIL-125(Ti-Zr) was effectively attached to the irregular small particles of Zn(In0.1Ga0.9)2O4. The existence of an S-scheme heterojunction at the interface of Zn(In0.1Ga0.9)2O4 and NH2-MIL-125 (Ti-Zr) was confirmed through various characterization techniques, including photoelectrochemical tests, XPS analysis, and free radical trapping experiments. As demonstrated by photocatalytic experiments, the NZ-20 % composite has the highest photocatalytic activity and good stability. The degradation efficiencies for Rh. B and tetracycline over the NZ-20 % composite sample under solar light irradiation for 90 min are 96.3 % and 88.5 %, respectively. Additionally, the response surface methodology (RSM) was employed to analyze the key factors affecting the photocatalytic degradation of organic pollutants, namely pH value, temperature, and contaminant level. All in all, this work presents a potential strategy to fabricate superior composite photocatalysts with S-scheme heterojunctions for combating environmental pollution challenges.
KW - Degradation of organic pollutant
KW - NH-MIL-125(Ti-Zr)
KW - S-scheme heterojunction
KW - Zn(InGa)O
UR - http://www.scopus.com/inward/record.url?scp=105007823054&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2025.109772
DO - 10.1016/j.mssp.2025.109772
M3 - 文章
AN - SCOPUS:105007823054
SN - 1369-8001
VL - 198
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 109772
ER -