Dependence of Zr content on electrical properties of Bi 3.15Nd0.85Ti3-xZrxO12 thin films synthesized by chemical solution deposition (CSD)

Lurong Wang; Changchun Chen; Zhonghai Tang; Chunhua Lu; Benhai Yu

doi:10.1016/j.vacuum.2010.05.014

Dependence of Zr content on electrical properties of Bi _3.15Nd_0.85Ti_3-xZr_xO₁₂ thin films synthesized by chemical solution deposition (CSD)

Lurong Wang, Changchun Chen, Zhonghai Tang, Chunhua Lu, Benhai Yu

College of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The Bi_3.15Nd_0.85Ti_3-xZr_xO ₁₂ (BNTZ) thin films with Zr content (x = 0, 0.05, 0. 1, 0.15, and 0.2) were prepared on Pt/Ti/SiO₂/Si (100) substrates by chemical solution deposition (CSD) technique. The crystal structures of BNTZ films were analyzed by X-ray diffraction (XRD). The effects of Zr contents on the ferroelectric, dielectric properties, and leakage current of BNTZ films were thoroughly investigated. The XRD results demonstrated that all the films possessed a single phase bismuth-layered structure and exhibited the highly preferred (117) orientation. Among these films, the film with Zr content x = 0.1 held the maximum remanent polarization (2P_r) of 50.21 μC/cm ² and a low coercive field (2E_c) of 210 kV/cm.

Original language	English
Pages (from-to)	203-206
Number of pages	4
Journal	Vacuum
Volume	85
Issue number	2
DOIs	https://doi.org/10.1016/j.vacuum.2010.05.014
State	Published - 20 Aug 2010

Keywords

BiNdTiZrO thin films
Chemical solution deposition
Ferroelectrics properties

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10.1016/j.vacuum.2010.05.014

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title = "Dependence of Zr content on electrical properties of Bi 3.15Nd0.85Ti3-xZrxO12 thin films synthesized by chemical solution deposition (CSD)",

abstract = "The Bi3.15Nd0.85Ti3-xZrxO 12 (BNTZ) thin films with Zr content (x = 0, 0.05, 0. 1, 0.15, and 0.2) were prepared on Pt/Ti/SiO2/Si (100) substrates by chemical solution deposition (CSD) technique. The crystal structures of BNTZ films were analyzed by X-ray diffraction (XRD). The effects of Zr contents on the ferroelectric, dielectric properties, and leakage current of BNTZ films were thoroughly investigated. The XRD results demonstrated that all the films possessed a single phase bismuth-layered structure and exhibited the highly preferred (117) orientation. Among these films, the film with Zr content x = 0.1 held the maximum remanent polarization (2Pr) of 50.21 μC/cm 2 and a low coercive field (2Ec) of 210 kV/cm.",

keywords = "BiNdTiZrO thin films, Chemical solution deposition, Ferroelectrics properties",

author = "Lurong Wang and Changchun Chen and Zhonghai Tang and Chunhua Lu and Benhai Yu",

year = "2010",

month = aug,

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doi = "10.1016/j.vacuum.2010.05.014",

language = "英语",

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pages = "203--206",

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TY - JOUR

T1 - Dependence of Zr content on electrical properties of Bi 3.15Nd0.85Ti3-xZrxO12 thin films synthesized by chemical solution deposition (CSD)

AU - Wang, Lurong

AU - Chen, Changchun

AU - Tang, Zhonghai

AU - Lu, Chunhua

AU - Yu, Benhai

PY - 2010/8/20

Y1 - 2010/8/20

N2 - The Bi3.15Nd0.85Ti3-xZrxO 12 (BNTZ) thin films with Zr content (x = 0, 0.05, 0. 1, 0.15, and 0.2) were prepared on Pt/Ti/SiO2/Si (100) substrates by chemical solution deposition (CSD) technique. The crystal structures of BNTZ films were analyzed by X-ray diffraction (XRD). The effects of Zr contents on the ferroelectric, dielectric properties, and leakage current of BNTZ films were thoroughly investigated. The XRD results demonstrated that all the films possessed a single phase bismuth-layered structure and exhibited the highly preferred (117) orientation. Among these films, the film with Zr content x = 0.1 held the maximum remanent polarization (2Pr) of 50.21 μC/cm 2 and a low coercive field (2Ec) of 210 kV/cm.

AB - The Bi3.15Nd0.85Ti3-xZrxO 12 (BNTZ) thin films with Zr content (x = 0, 0.05, 0. 1, 0.15, and 0.2) were prepared on Pt/Ti/SiO2/Si (100) substrates by chemical solution deposition (CSD) technique. The crystal structures of BNTZ films were analyzed by X-ray diffraction (XRD). The effects of Zr contents on the ferroelectric, dielectric properties, and leakage current of BNTZ films were thoroughly investigated. The XRD results demonstrated that all the films possessed a single phase bismuth-layered structure and exhibited the highly preferred (117) orientation. Among these films, the film with Zr content x = 0.1 held the maximum remanent polarization (2Pr) of 50.21 μC/cm 2 and a low coercive field (2Ec) of 210 kV/cm.

KW - BiNdTiZrO thin films

KW - Chemical solution deposition

KW - Ferroelectrics properties

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U2 - 10.1016/j.vacuum.2010.05.014

DO - 10.1016/j.vacuum.2010.05.014

M3 - 文章

AN - SCOPUS:77956613903

SN - 0042-207X

VL - 85

SP - 203

EP - 206

JO - Vacuum

JF - Vacuum

IS - 2

ER -

Dependence of Zr content on electrical properties of Bi _3.15Nd_0.85Ti_3-xZr_xO₁₂ thin films synthesized by chemical solution deposition (CSD)

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