Effects of Sb-doping on the electron-phonon transport properties of Bi2O2Se

Nannan Yang; Lin Pan; Changchun Chen; Yifeng Wang

doi:10.1016/j.jallcom.2020.157748

Effects of Sb-doping on the electron-phonon transport properties of Bi₂O₂Se

Nannan Yang, Lin Pan, Changchun Chen, Yifeng Wang

College of Materials Science and Engineering

Nanjing Tech University

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

In this study, Sb-doping with the procedure of shear exfoliation was adopted in order to improve the thermoelectric performance of Bi₂O₂Se. It is found that Sb-doping could further increase the electron concentration and mobility, leading to a high electrical conductivity. (e.g., 517 S cm⁻¹ of Bi_1.96Sb_0.04O₂Se at room temperature) Besides, thermal conductivity had been inhibited to 0.6 Wm^-1 K⁻¹ at 770 K for the sample Bi_1.99Sb_0.01O₂Se. Finally, a peak ZT of around 0.59 at 773 K was achieved for the sample Bi_1.98Sb_0.02O₂Se, which is about 1.8 times larger than that of un-doped one. The results indicate that Sb-doping with the procedure of shear exfoliation could optimize the thermoelectric performance of Bi₂O₂Se noticeably.

Original language	English
Article number	157748
Journal	Journal of Alloys and Compounds
Volume	858
DOIs	https://doi.org/10.1016/j.jallcom.2020.157748
State	Published - 25 Mar 2021

Keywords

BiOSe
Sb-doping
Shear exfoliation
Thermoelectric

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10.1016/j.jallcom.2020.157748

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title = "Effects of Sb-doping on the electron-phonon transport properties of Bi2O2Se",

abstract = "In this study, Sb-doping with the procedure of shear exfoliation was adopted in order to improve the thermoelectric performance of Bi2O2Se. It is found that Sb-doping could further increase the electron concentration and mobility, leading to a high electrical conductivity. (e.g., 517 S cm−1 of Bi1.96Sb0.04O2Se at room temperature) Besides, thermal conductivity had been inhibited to 0.6 Wm-1 K−1 at 770 K for the sample Bi1.99Sb0.01O2Se. Finally, a peak ZT of around 0.59 at 773 K was achieved for the sample Bi1.98Sb0.02O2Se, which is about 1.8 times larger than that of un-doped one. The results indicate that Sb-doping with the procedure of shear exfoliation could optimize the thermoelectric performance of Bi2O2Se noticeably.",

keywords = "BiOSe, Sb-doping, Shear exfoliation, Thermoelectric",

author = "Nannan Yang and Lin Pan and Changchun Chen and Yifeng Wang",

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year = "2021",

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doi = "10.1016/j.jallcom.2020.157748",

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T1 - Effects of Sb-doping on the electron-phonon transport properties of Bi2O2Se

AU - Yang, Nannan

AU - Pan, Lin

AU - Chen, Changchun

AU - Wang, Yifeng

PY - 2021/3/25

Y1 - 2021/3/25

N2 - In this study, Sb-doping with the procedure of shear exfoliation was adopted in order to improve the thermoelectric performance of Bi2O2Se. It is found that Sb-doping could further increase the electron concentration and mobility, leading to a high electrical conductivity. (e.g., 517 S cm−1 of Bi1.96Sb0.04O2Se at room temperature) Besides, thermal conductivity had been inhibited to 0.6 Wm-1 K−1 at 770 K for the sample Bi1.99Sb0.01O2Se. Finally, a peak ZT of around 0.59 at 773 K was achieved for the sample Bi1.98Sb0.02O2Se, which is about 1.8 times larger than that of un-doped one. The results indicate that Sb-doping with the procedure of shear exfoliation could optimize the thermoelectric performance of Bi2O2Se noticeably.

AB - In this study, Sb-doping with the procedure of shear exfoliation was adopted in order to improve the thermoelectric performance of Bi2O2Se. It is found that Sb-doping could further increase the electron concentration and mobility, leading to a high electrical conductivity. (e.g., 517 S cm−1 of Bi1.96Sb0.04O2Se at room temperature) Besides, thermal conductivity had been inhibited to 0.6 Wm-1 K−1 at 770 K for the sample Bi1.99Sb0.01O2Se. Finally, a peak ZT of around 0.59 at 773 K was achieved for the sample Bi1.98Sb0.02O2Se, which is about 1.8 times larger than that of un-doped one. The results indicate that Sb-doping with the procedure of shear exfoliation could optimize the thermoelectric performance of Bi2O2Se noticeably.

KW - BiOSe

KW - Sb-doping

KW - Shear exfoliation

KW - Thermoelectric

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SN - 0925-8388

VL - 858

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 157748

ER -

Effects of Sb-doping on the electron-phonon transport properties of Bi₂O₂Se

Abstract

Keywords

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