Abstract
BaTb0.01SnxTi0.99-xO3(x=0, 0.05, 0.10, 0.15) ceramics were prepared by conventional solid-state method. The effects of Sn-doping amount on microstructure and dielectric properties of the ceramic were investigated by X-ray diffraction, SEM and impedance analyzer. The results show that single-phase perovskite structure formed and the grain size reduced by doping SnO2. When the content of Sn was 10 mol% and sintering temperature was 1350℃, the Curie point of BaTb0.01Sn0.1Ti0.89O3 ceramic shifted to room temperature and the dielectric constant significantly increased. The dielectric constant of BaTb0.01Sn0.1Ti0.89O3 ceramic reached 9069, and the dielectric loss was only 0.011 at room temperature.
Original language | English |
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Pages (from-to) | 2592-2596 |
Number of pages | 5 |
Journal | Rengong Jingti Xuebao/Journal of Synthetic Crystals |
Volume | 43 |
Issue number | 10 |
State | Published - 1 Oct 2014 |
Keywords
- BaTiO
- Dielectric property
- Solid state method