TY - JOUR
T1 - Electron localization in metal-decorated graphene
AU - Li, Wei
AU - He, Yuheng
AU - Wang, Lin
AU - Ding, Guohui
AU - Zhang, Zhao Qing
AU - Lortz, Rolf W.
AU - Sheng, Ping
AU - Wang, Ning
PY - 2011/7/15
Y1 - 2011/7/15
N2 - By decorating single-layer graphene with disordered noble metal (Ag, Au, and Pt) clusters, we investigated experimentally the influence of strong random scatterings on graphene transport and electron-localization phenomena. As evidenced by micro-Raman scattering, there is a strong interction between the metal clusters and graphene. We found that such a strong interaction was the consequence of plasma-assisted decoration of the graphene by the metal clusters. A large negative magnetoresistance (MR) effect (up to 80% at 12 T) was observed and fitted using different models. The structure, size, and area density of metal clusters were characterized by scanning tunneling microscopy and transmission electron microscopy. The samples with a high concentration of scattering centers behaved as insulators at low temperatures and showed strong localization (SL) effects. Their temperature-dependent conductance was in accordance with the two-dimensional variable-range hopping (VRH) mechanism. The localization lengths and density of states were estimated and discussed.
AB - By decorating single-layer graphene with disordered noble metal (Ag, Au, and Pt) clusters, we investigated experimentally the influence of strong random scatterings on graphene transport and electron-localization phenomena. As evidenced by micro-Raman scattering, there is a strong interction between the metal clusters and graphene. We found that such a strong interaction was the consequence of plasma-assisted decoration of the graphene by the metal clusters. A large negative magnetoresistance (MR) effect (up to 80% at 12 T) was observed and fitted using different models. The structure, size, and area density of metal clusters were characterized by scanning tunneling microscopy and transmission electron microscopy. The samples with a high concentration of scattering centers behaved as insulators at low temperatures and showed strong localization (SL) effects. Their temperature-dependent conductance was in accordance with the two-dimensional variable-range hopping (VRH) mechanism. The localization lengths and density of states were estimated and discussed.
UR - http://www.scopus.com/inward/record.url?scp=79961177484&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.84.045431
DO - 10.1103/PhysRevB.84.045431
M3 - 文章
AN - SCOPUS:79961177484
SN - 1098-0121
VL - 84
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 4
M1 - 045431
ER -