TY - JOUR
T1 - Engineering the electronic structure of graphene
AU - Zhan, Da
AU - Yan, Jiaxu
AU - Lai, Linfei
AU - Ni, Zhenhua
AU - Liu, Lei
AU - Shen, Zexiang
PY - 2012/8/8
Y1 - 2012/8/8
N2 - Graphene exhibits many unique electronic properties owing to its linear dispersive electronic band structure around the Dirac point, making it one of the most studied materials in the last 5-6 years. However, for many applications of graphene, further tuning its electronic band structure is necessary and has been extensively studied ever since graphene was first isolated experimentally. Here we review the major progresses made in electronic structure engineering of graphene, namely by electric and magnetic fields, chemical intercalation and adsorption, stacking geometry, edge-chirality, defects, as well as strain. Tuning the electronic band structure of graphene is of great importance for its application in electronic devices. In this paper, we review the recent progress in electronic structure engineering of graphene, by applying electric and magnetic fields, introducing chemical intercalation and adsorption, changing stacking geometry and edge structure, introducing defects, as well as applying strain.
AB - Graphene exhibits many unique electronic properties owing to its linear dispersive electronic band structure around the Dirac point, making it one of the most studied materials in the last 5-6 years. However, for many applications of graphene, further tuning its electronic band structure is necessary and has been extensively studied ever since graphene was first isolated experimentally. Here we review the major progresses made in electronic structure engineering of graphene, namely by electric and magnetic fields, chemical intercalation and adsorption, stacking geometry, edge-chirality, defects, as well as strain. Tuning the electronic band structure of graphene is of great importance for its application in electronic devices. In this paper, we review the recent progress in electronic structure engineering of graphene, by applying electric and magnetic fields, introducing chemical intercalation and adsorption, changing stacking geometry and edge structure, introducing defects, as well as applying strain.
KW - doping
KW - edge
KW - electronic structure
KW - graphene
KW - stacking
UR - http://www.scopus.com/inward/record.url?scp=84864617063&partnerID=8YFLogxK
U2 - 10.1002/adma.201200011
DO - 10.1002/adma.201200011
M3 - 文章
C2 - 22760840
AN - SCOPUS:84864617063
SN - 0935-9648
VL - 24
SP - 4055
EP - 4069
JO - Advanced Materials
JF - Advanced Materials
IS - 30
ER -