TY - JOUR
T1 - Fluctuation-induced tunneling conduction in iodine-doped bilayer graphene
AU - Wu, Zefei
AU - Chen, Xiaolong
AU - Zhang, Mingwei
AU - Wang, Lin
AU - Han, Yu
AU - Xu, Shuigang
AU - Han, Tianyi
AU - Lin, Jiangxiazi
AU - An, Liheng
AU - Wang, Jingwei
AU - Cai, Xiangbin
AU - Shi, Run
AU - Cheng, Chun
AU - Wang, Ning
N1 - Publisher Copyright:
© 2018 Author(s).
PY - 2018/6/28
Y1 - 2018/6/28
N2 - Intrinsic bilayer graphene is a semimetal. Upon applying an electric field, the potential difference between top and bottom layers can open an energy gap and tune bilayer graphene to an insulating state at the charge neutrality point. Here, we demonstrate that the properties of semimetallic bilayer graphene can be controllably tuned to either metallic or insulating by a simple way of iodine molecular doping. The transport properties of iodine-doped bilayer graphene have been systematically investigated. At high iodine doping concentrations, the Fermi level shifts by approximately 0.35 eV to the metallic region because of the symmetric doping on the top and bottom bilayer surfaces. At low iodine doping concentrations, small energy gaps open in local areas due to the asymmetric doping between the top and the bottom graphene layers. In this case, an insulating behavior at low temperatures is observed, which can be well explained by employing the fluctuation-induced tunneling (FIT) model. At medium iodine doping concentrations, both metallic and insulating behaviors can be observed at different temperatures, implying that both FIT and metallic mechanisms take effect. Our work may have potential applications in on/off controllable electronic devices, gas sensors, and transparent flexible electrode in optoelectronics.
AB - Intrinsic bilayer graphene is a semimetal. Upon applying an electric field, the potential difference between top and bottom layers can open an energy gap and tune bilayer graphene to an insulating state at the charge neutrality point. Here, we demonstrate that the properties of semimetallic bilayer graphene can be controllably tuned to either metallic or insulating by a simple way of iodine molecular doping. The transport properties of iodine-doped bilayer graphene have been systematically investigated. At high iodine doping concentrations, the Fermi level shifts by approximately 0.35 eV to the metallic region because of the symmetric doping on the top and bottom bilayer surfaces. At low iodine doping concentrations, small energy gaps open in local areas due to the asymmetric doping between the top and the bottom graphene layers. In this case, an insulating behavior at low temperatures is observed, which can be well explained by employing the fluctuation-induced tunneling (FIT) model. At medium iodine doping concentrations, both metallic and insulating behaviors can be observed at different temperatures, implying that both FIT and metallic mechanisms take effect. Our work may have potential applications in on/off controllable electronic devices, gas sensors, and transparent flexible electrode in optoelectronics.
UR - http://www.scopus.com/inward/record.url?scp=85049254562&partnerID=8YFLogxK
U2 - 10.1063/1.5027549
DO - 10.1063/1.5027549
M3 - 文章
AN - SCOPUS:85049254562
SN - 0021-8979
VL - 123
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 24
M1 - 244302
ER -