Influence of Pb doping on the electrical transport properties of BiCuSeO

Lin Pan; David Bérardan; Lidong Zhao; Céline Barreteau; Nita Dragoe

doi:10.1063/1.4775593

Influence of Pb doping on the electrical transport properties of BiCuSeO

Lin Pan, David Bérardan, Lidong Zhao, Céline Barreteau, Nita Dragoe

Institut de Chimie Moléculaire et des Matériaux d'Orsay

Research output: Contribution to journal › Article › peer-review

101 Scopus citations

Abstract

The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi_1-xPb_xCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi_1- _xPb_xCuSeO (x = 0.03) reaches 5.3 μW cm^-1 K^-2 at 873 K. The influence of Pb²⁺ doping on the electronic structure is the same as the one obtained with Sr²⁺, however, the decrease of the holes mobility is reduced as compared to Sr ²⁺ doping, which could be beneficial to the thermoelectric performances.

Original language	English
Article number	023902
Journal	Applied Physics Letters
Volume	102
Issue number	2
DOIs	https://doi.org/10.1063/1.4775593
State	Published - 14 Jan 2013
Externally published	Yes

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abstract = "The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi1-xPbxCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi1- xPbxCuSeO (x = 0.03) reaches 5.3 μW cm-1 K-2 at 873 K. The influence of Pb2+ doping on the electronic structure is the same as the one obtained with Sr2+, however, the decrease of the holes mobility is reduced as compared to Sr 2+ doping, which could be beneficial to the thermoelectric performances.",

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AU - Pan, Lin

AU - Bérardan, David

AU - Zhao, Lidong

AU - Barreteau, Céline

AU - Dragoe, Nita

PY - 2013/1/14

Y1 - 2013/1/14

N2 - The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi1-xPbxCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi1- xPbxCuSeO (x = 0.03) reaches 5.3 μW cm-1 K-2 at 873 K. The influence of Pb2+ doping on the electronic structure is the same as the one obtained with Sr2+, however, the decrease of the holes mobility is reduced as compared to Sr 2+ doping, which could be beneficial to the thermoelectric performances.

AB - The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi1-xPbxCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi1- xPbxCuSeO (x = 0.03) reaches 5.3 μW cm-1 K-2 at 873 K. The influence of Pb2+ doping on the electronic structure is the same as the one obtained with Sr2+, however, the decrease of the holes mobility is reduced as compared to Sr 2+ doping, which could be beneficial to the thermoelectric performances.

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Influence of Pb doping on the electrical transport properties of BiCuSeO

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