Ion Implantation Combined with Heat Treatment Enables Excellent Conductivity and Corrosion Resistance of Stainless Steel Bipolar Plate Anode for Hydrogen Fuel Cells

Li Ding, Chaoqin Ren, Ruijuan Wang, Meng Yang, Yong Pan

Research output: Contribution to journalArticlepeer-review

Abstract

The broad use of (stainless steel) SS 316 L bipolar plates (BPs) in proton exchange membrane fuel cells relies (PEMFC) on high conductivity and corrosion resistance. To enhance the properties of stainless steel, this study applies ion implantation and heat treatment to form a non-homogeneous modified layer on SS 316 L. The injection of C and Mo ions on the SS 316 L surface caused irradiation damage, producing holes. But with the heat treatment of the ion-implanted samples, the irradiation-damaged surface will be repaired to a certain extent. The corrosion current density (Icorr) of the 600 °C sample in the kinetic potential test (5.32 × 10−4 A/cm2) was 54% lower than that of the naked SS 316 L (1.17 × 10−3 A/cm2). In the electrostatic potential test, the corrosion current of the 600 °C sample stabilized at a low value (about 0.26 μA/cm2), with the lowest concentration of dissolved metal ions (Fe2+ 2.908 mg/L). After anodic electrostatic potential polarization, the interfacial contact resistance (ICR) of (Mo+C)600-1 was much lower than that of the untreated SS 316 L. Heat treatment experiments show that samples treated at 600 °C for 1 h exhibit significantly higher conductivity and anodic corrosion resistance than naked SS 316 L. This improvement is mainly due to the heat treatment under these conditions, which facilitated the formation of Mo carbides from the implanted C and Mo elements. Ion implantation and heat treatment enhance stainless steel surface conductivity and passive film corrosion resistance. These findings are useful in altering stainless steel BPs.

Original languageEnglish
Article number1483
JournalMaterials
Volume18
Issue number7
DOIs
StatePublished - Apr 2025

Keywords

  • corrosion resistance
  • heat treatment
  • interfacial contact resistance
  • ion implantation

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