Memory effect and charge-transport mechanisms of write-once-read-many-times bistable devices based on ZnS quantum dots embedded in poly-4-vinyl-phenol layer

Yan Yu Wu; Xiao Song Zhang; Jian Ping Xu; Xi Ping Niu; Cheng Yuan Luo; Mei Hui Li; Ping Li; Qing Liang Shi; Lan Li

doi:10.3788/fgxb20123304.0428

Memory effect and charge-transport mechanisms of write-once-read-many-times bistable devices based on ZnS quantum dots embedded in poly-4-vinyl-phenol layer

Yan Yu Wu, Xiao Song Zhang, Jian Ping Xu, Xi Ping Niu, Cheng Yuan Luo, Mei Hui Li, Ping Li, Qing Liang Shi, Lan Li

Tianjin University of Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A write-once-read-many-times (WORM) bistable device was prepared, in which ZnS quantum dots doped poly-4-vinyl-phenol (PVP) layer was sandwiched between ITO anode and Al cathode. Current-voltage (I-V) curves showed a switching characteristic with a large ON/OFF ratio of 10 ⁴. The electrical bistability properties and charge-transport mechanisms were discussed in detail based on I-V characteristics. The conduction mechanisms in both ON- and OFF-states were discussed in terms of different theoretical models. The data-retention characteristics of the current-time (I-t) curve exhibited permanent retention ability at ambient conditions.

Original language	English
Pages (from-to)	428-432
Number of pages	5
Journal	Chinese Journal of Luminescence
Volume	33
Issue number	4
DOIs	https://doi.org/10.3788/fgxb20123304.0428
State	Published - Apr 2012
Externally published	Yes

Keywords

Charge-transport mechanism
OBD
Poly-4-vinyl-phenol
ZnS quantum dots

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10.3788/fgxb20123304.0428

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title = "Memory effect and charge-transport mechanisms of write-once-read-many-times bistable devices based on ZnS quantum dots embedded in poly-4-vinyl-phenol layer",

abstract = "A write-once-read-many-times (WORM) bistable device was prepared, in which ZnS quantum dots doped poly-4-vinyl-phenol (PVP) layer was sandwiched between ITO anode and Al cathode. Current-voltage (I-V) curves showed a switching characteristic with a large ON/OFF ratio of 10 4. The electrical bistability properties and charge-transport mechanisms were discussed in detail based on I-V characteristics. The conduction mechanisms in both ON- and OFF-states were discussed in terms of different theoretical models. The data-retention characteristics of the current-time (I-t) curve exhibited permanent retention ability at ambient conditions.",

keywords = "Charge-transport mechanism, OBD, Poly-4-vinyl-phenol, ZnS quantum dots",

author = "Wu, {Yan Yu} and Zhang, {Xiao Song} and Xu, {Jian Ping} and Niu, {Xi Ping} and Luo, {Cheng Yuan} and Li, {Mei Hui} and Ping Li and Shi, {Qing Liang} and Lan Li",

year = "2012",

month = apr,

doi = "10.3788/fgxb20123304.0428",

language = "英语",

volume = "33",

pages = "428--432",

journal = "Chinese Journal of Luminescence",

issn = "1000-7032",

publisher = "Chines Academy of Sciences",

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AU - Wu, Yan Yu

AU - Zhang, Xiao Song

AU - Xu, Jian Ping

AU - Niu, Xi Ping

AU - Luo, Cheng Yuan

AU - Li, Mei Hui

AU - Li, Ping

AU - Shi, Qing Liang

AU - Li, Lan

PY - 2012/4

Y1 - 2012/4

N2 - A write-once-read-many-times (WORM) bistable device was prepared, in which ZnS quantum dots doped poly-4-vinyl-phenol (PVP) layer was sandwiched between ITO anode and Al cathode. Current-voltage (I-V) curves showed a switching characteristic with a large ON/OFF ratio of 10 4. The electrical bistability properties and charge-transport mechanisms were discussed in detail based on I-V characteristics. The conduction mechanisms in both ON- and OFF-states were discussed in terms of different theoretical models. The data-retention characteristics of the current-time (I-t) curve exhibited permanent retention ability at ambient conditions.

AB - A write-once-read-many-times (WORM) bistable device was prepared, in which ZnS quantum dots doped poly-4-vinyl-phenol (PVP) layer was sandwiched between ITO anode and Al cathode. Current-voltage (I-V) curves showed a switching characteristic with a large ON/OFF ratio of 10 4. The electrical bistability properties and charge-transport mechanisms were discussed in detail based on I-V characteristics. The conduction mechanisms in both ON- and OFF-states were discussed in terms of different theoretical models. The data-retention characteristics of the current-time (I-t) curve exhibited permanent retention ability at ambient conditions.

KW - Charge-transport mechanism

KW - OBD

KW - Poly-4-vinyl-phenol

KW - ZnS quantum dots

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DO - 10.3788/fgxb20123304.0428

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ER -

Memory effect and charge-transport mechanisms of write-once-read-many-times bistable devices based on ZnS quantum dots embedded in poly-4-vinyl-phenol layer

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Keywords

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