Microwave dielectric properties of high-Q Mg(SnxTi1-x)O3 ceramics

Zhijie Gong; Zhefei Wang; Lixi Wang; Zhenxiao Fu; Wei Han; Qitu Zhang

doi:10.1007/s13391-013-2214-3

Microwave dielectric properties of high-Q Mg(Sn_xTi_1-x)O₃ ceramics

Zhijie Gong, Zhefei Wang, Lixi Wang, Zhenxiao Fu, Wei Han, Qitu Zhang

College of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

A series of Sn-doped Mg(Sn_xTi_1-x)O₃ ceramics were prepared using the conventional solid-state route. The influence of Sn⁴⁺ substitution for Ti⁴⁺ on the microstructure and microwave dielectric properties of Mg(Sn_xTi_1-x)O₃ ceramics was systematically investigated. Substitution with a suitable amount of Sn can eliminate the MgTi₂O₅ phase. The dielectric constants and temperature coefficients of resonant frequency changed slightly with the variation in Sn content in the specimens. However, the quality factors (Q) dramatically improved and were sensitive to the concentration of Sn⁴⁺. The high Q value was attributed to the uniform grain, clean and narrow grain boundary, and elimination of the MgTi₂O₅ phase. Moreover, the composition-optimized Mg(Sn_0.05Ti_0.95)O₃ ceramics sintered at 1390°C exhibited excellent microwave dielectric properties of e{open} _r = 17.61, Q×f = 328,543 GHz, and τ _f = -42 ppm/°C.

Original language	English
Pages (from-to)	331-335
Number of pages	5
Journal	Electronic Materials Letters
Volume	9
Issue number	3
DOIs	https://doi.org/10.1007/s13391-013-2214-3
State	Published - May 2013

Keywords

MgTiO ceramic
Sn substitution
high Q value
microwave dielectric

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title = "Microwave dielectric properties of high-Q Mg(SnxTi1-x)O3 ceramics",

abstract = "A series of Sn-doped Mg(SnxTi1-x)O3 ceramics were prepared using the conventional solid-state route. The influence of Sn4+ substitution for Ti4+ on the microstructure and microwave dielectric properties of Mg(SnxTi1-x)O3 ceramics was systematically investigated. Substitution with a suitable amount of Sn can eliminate the MgTi2O5 phase. The dielectric constants and temperature coefficients of resonant frequency changed slightly with the variation in Sn content in the specimens. However, the quality factors (Q) dramatically improved and were sensitive to the concentration of Sn4+. The high Q value was attributed to the uniform grain, clean and narrow grain boundary, and elimination of the MgTi2O5 phase. Moreover, the composition-optimized Mg(Sn0.05Ti0.95)O3 ceramics sintered at 1390°C exhibited excellent microwave dielectric properties of e{open} r = 17.61, Q×f = 328,543 GHz, and τ f = -42 ppm/°C.",

keywords = "MgTiO ceramic, Sn substitution, high Q value, microwave dielectric",

author = "Zhijie Gong and Zhefei Wang and Lixi Wang and Zhenxiao Fu and Wei Han and Qitu Zhang",

year = "2013",

month = may,

doi = "10.1007/s13391-013-2214-3",

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T1 - Microwave dielectric properties of high-Q Mg(SnxTi1-x)O3 ceramics

AU - Gong, Zhijie

AU - Wang, Zhefei

AU - Wang, Lixi

AU - Fu, Zhenxiao

AU - Han, Wei

AU - Zhang, Qitu

PY - 2013/5

Y1 - 2013/5

N2 - A series of Sn-doped Mg(SnxTi1-x)O3 ceramics were prepared using the conventional solid-state route. The influence of Sn4+ substitution for Ti4+ on the microstructure and microwave dielectric properties of Mg(SnxTi1-x)O3 ceramics was systematically investigated. Substitution with a suitable amount of Sn can eliminate the MgTi2O5 phase. The dielectric constants and temperature coefficients of resonant frequency changed slightly with the variation in Sn content in the specimens. However, the quality factors (Q) dramatically improved and were sensitive to the concentration of Sn4+. The high Q value was attributed to the uniform grain, clean and narrow grain boundary, and elimination of the MgTi2O5 phase. Moreover, the composition-optimized Mg(Sn0.05Ti0.95)O3 ceramics sintered at 1390°C exhibited excellent microwave dielectric properties of e{open} r = 17.61, Q×f = 328,543 GHz, and τ f = -42 ppm/°C.

AB - A series of Sn-doped Mg(SnxTi1-x)O3 ceramics were prepared using the conventional solid-state route. The influence of Sn4+ substitution for Ti4+ on the microstructure and microwave dielectric properties of Mg(SnxTi1-x)O3 ceramics was systematically investigated. Substitution with a suitable amount of Sn can eliminate the MgTi2O5 phase. The dielectric constants and temperature coefficients of resonant frequency changed slightly with the variation in Sn content in the specimens. However, the quality factors (Q) dramatically improved and were sensitive to the concentration of Sn4+. The high Q value was attributed to the uniform grain, clean and narrow grain boundary, and elimination of the MgTi2O5 phase. Moreover, the composition-optimized Mg(Sn0.05Ti0.95)O3 ceramics sintered at 1390°C exhibited excellent microwave dielectric properties of e{open} r = 17.61, Q×f = 328,543 GHz, and τ f = -42 ppm/°C.

KW - MgTiO ceramic

KW - Sn substitution

KW - high Q value

KW - microwave dielectric

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U2 - 10.1007/s13391-013-2214-3

DO - 10.1007/s13391-013-2214-3

M3 - 文章

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SN - 1738-8090

VL - 9

SP - 331

EP - 335

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 3

ER -

Microwave dielectric properties of high-Q Mg(Sn_xTi_1-x)O₃ ceramics

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