New n-type silicide thermoelectric material with high oxidation resistance

Ryoji Funahashi, Yoko Matsumura, Tomonari Takeuchi, Hideaki Tanaka, Wataru Norimatsu, Emmanuel Combe, Ryosuke O. Suzuki, Chunlei Wan, Yifeng Wang, Michiko Kusunoki, Kunihito Koumoto

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

In order to achieve waste heat recovery using thermoelectric systems, thermoelectric materials showing high conversion efficiency over wide temperature range and high resistance against oxidation are indispensable. A silicide material with good n-type thermoelectric properties and oxidation resistance has been discovered. The composition and crystal structure of the silicide are found out Mn3Si4Al2 (abbreviated as 342 phase) and hexagonal CrSi2 structure, respectively. Element substitution of Mn with 3d transition metals is succeeded. Enhancement of Seebeck coefficient is observed in a Cr-substituted sample. The maximum dimensionless thermoelectric figure of merit ZT is 0.3 at 573 K in air for the Mn2.7Cr0.3Si4Al2 sample. Electrical resistivity of the Mn3Si4Al2 bulk sample holds constant value for 48 h at 873 K in air. This is due to formation of oxide passive layer on the surface of the bulk sample. The 342 phase is a promising n-type material with a good oxidation resistance in the middle temperature range of 500-800 K.

Original languageEnglish
Title of host publicationThermoelectric Materials Research and Device Development for Power Conversion and Refrigeration
Pages103-112
Number of pages10
DOIs
StatePublished - 2013
Externally publishedYes
Event2012 MRS Fall Meeting - Boston, MA, United States
Duration: 25 Nov 201230 Nov 2012

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1490
ISSN (Print)0272-9172

Conference

Conference2012 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA
Period25/11/1230/11/12

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