Optimized energy-storage performance in Mn-doped Na0.5Bi0.5TiO3-Sr0.7Bi0.2TiO3 lead-free dielectric thin films

Jun Wang; Guoxiu Qiu; Hao Qian; Yunfei Liu; Jin Luo; Yinong Lyu

doi:10.1016/j.apsusc.2021.151274

Optimized energy-storage performance in Mn-doped Na_0.5Bi_0.5TiO₃-Sr_0.7Bi_0.2TiO₃ lead-free dielectric thin films

Jun Wang, Guoxiu Qiu, Hao Qian, Yunfei Liu, Jin Luo, Yinong Lyu

College of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

The 0.55Na_0.5Bi_0.5TiO₃-0.45Sr_0.7Bi_0.2TiO₃ (0.55NBT-0.45SBT) thin films with Mn doping were fabricated on the platinum-buffered Si substrates using the sol–gel technique. The impacts of Mn doping on the structure and properties of the thin films were systematically studied. Mn doping into the thin films can limit the valence transition of Ti cations to improve the insulation performance, and advance the ferroelectric properties. Ordered B-site cation displacement can be observed from the HADDF-STEM image, which can only be maintained in a single nano-sized crystal grain, and its order scale is limited by the grain size. The 0.55NBT-0.45SBT-0.01Mn film exhibited relatively high recoverable energy storage density (∼30.5 J/cm²) and efficiency (∼65%) at 2800 kV cm⁻¹. Frequency stability in a wide range (0.5 ∼ 20 kHz) and long-term antifatigue stability (1 × 10⁸ switching cycles) were also obtained, indicating their future applications in advanced dielectric capacitors for energy storage.

Original language	English
Article number	151274
Journal	Applied Surface Science
Volume	571
DOIs	https://doi.org/10.1016/j.apsusc.2021.151274
State	Published - 1 Jan 2022

Keywords

Energy storage density
Frequency stability
Leakage behavior
Sol-gel
Thin films

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title = "Optimized energy-storage performance in Mn-doped Na0.5Bi0.5TiO3-Sr0.7Bi0.2TiO3 lead-free dielectric thin films",

abstract = "The 0.55Na0.5Bi0.5TiO3-0.45Sr0.7Bi0.2TiO3 (0.55NBT-0.45SBT) thin films with Mn doping were fabricated on the platinum-buffered Si substrates using the sol–gel technique. The impacts of Mn doping on the structure and properties of the thin films were systematically studied. Mn doping into the thin films can limit the valence transition of Ti cations to improve the insulation performance, and advance the ferroelectric properties. Ordered B-site cation displacement can be observed from the HADDF-STEM image, which can only be maintained in a single nano-sized crystal grain, and its order scale is limited by the grain size. The 0.55NBT-0.45SBT-0.01Mn film exhibited relatively high recoverable energy storage density (∼30.5 J/cm2) and efficiency (∼65%) at 2800 kV cm−1. Frequency stability in a wide range (0.5 ∼ 20 kHz) and long-term antifatigue stability (1 × 108 switching cycles) were also obtained, indicating their future applications in advanced dielectric capacitors for energy storage.",

keywords = "Energy storage density, Frequency stability, Leakage behavior, Sol-gel, Thin films",

author = "Jun Wang and Guoxiu Qiu and Hao Qian and Yunfei Liu and Jin Luo and Yinong Lyu",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2022",

month = jan,

day = "1",

doi = "10.1016/j.apsusc.2021.151274",

language = "英语",

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T1 - Optimized energy-storage performance in Mn-doped Na0.5Bi0.5TiO3-Sr0.7Bi0.2TiO3 lead-free dielectric thin films

AU - Wang, Jun

AU - Qiu, Guoxiu

AU - Qian, Hao

AU - Liu, Yunfei

AU - Luo, Jin

AU - Lyu, Yinong

PY - 2022/1/1

Y1 - 2022/1/1

N2 - The 0.55Na0.5Bi0.5TiO3-0.45Sr0.7Bi0.2TiO3 (0.55NBT-0.45SBT) thin films with Mn doping were fabricated on the platinum-buffered Si substrates using the sol–gel technique. The impacts of Mn doping on the structure and properties of the thin films were systematically studied. Mn doping into the thin films can limit the valence transition of Ti cations to improve the insulation performance, and advance the ferroelectric properties. Ordered B-site cation displacement can be observed from the HADDF-STEM image, which can only be maintained in a single nano-sized crystal grain, and its order scale is limited by the grain size. The 0.55NBT-0.45SBT-0.01Mn film exhibited relatively high recoverable energy storage density (∼30.5 J/cm2) and efficiency (∼65%) at 2800 kV cm−1. Frequency stability in a wide range (0.5 ∼ 20 kHz) and long-term antifatigue stability (1 × 108 switching cycles) were also obtained, indicating their future applications in advanced dielectric capacitors for energy storage.

AB - The 0.55Na0.5Bi0.5TiO3-0.45Sr0.7Bi0.2TiO3 (0.55NBT-0.45SBT) thin films with Mn doping were fabricated on the platinum-buffered Si substrates using the sol–gel technique. The impacts of Mn doping on the structure and properties of the thin films were systematically studied. Mn doping into the thin films can limit the valence transition of Ti cations to improve the insulation performance, and advance the ferroelectric properties. Ordered B-site cation displacement can be observed from the HADDF-STEM image, which can only be maintained in a single nano-sized crystal grain, and its order scale is limited by the grain size. The 0.55NBT-0.45SBT-0.01Mn film exhibited relatively high recoverable energy storage density (∼30.5 J/cm2) and efficiency (∼65%) at 2800 kV cm−1. Frequency stability in a wide range (0.5 ∼ 20 kHz) and long-term antifatigue stability (1 × 108 switching cycles) were also obtained, indicating their future applications in advanced dielectric capacitors for energy storage.

KW - Energy storage density

KW - Frequency stability

KW - Leakage behavior

KW - Sol-gel

KW - Thin films

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DO - 10.1016/j.apsusc.2021.151274

M3 - 文章

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SN - 0169-4332

VL - 571

JO - Applied Surface Science

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ER -

Optimized energy-storage performance in Mn-doped Na_0.5Bi_0.5TiO₃-Sr_0.7Bi_0.2TiO₃ lead-free dielectric thin films

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