Perovskite Light-Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

Yarong He; Jiaxu Yan; Lei Xu; Bangmin Zhang; Qian Cheng; Yu Cao; Ju Zhang; Cong Tao; Yingqiang Wei; Kaichuan Wen; Zhiyuan Kuang; Gan Moog Chow; Zexiang Shen; Qiming Peng; Wei Huang; Jianpu Wang

doi:10.1002/adma.202006302

Perovskite Light-Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

Yarong He, Jiaxu Yan, Lei Xu, Bangmin Zhang, Qian Cheng, Yu Cao, Ju Zhang, Cong Tao, Yingqiang Wei, Kaichuan Wen, Zhiyuan Kuang, Gan Moog Chow, Zexiang Shen, Qiming Peng, Wei Huang, Jianpu Wang

SCHOOL OF FLEXIBLE ELECTRONICS(FUTURE TECHNOLOGIES)|INSTITUTE OF ADVANCED MATERIALS(IAM)

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Room-temperature-high-efficiency light-emitting diodes based on metal halide perovskite FAPbI₃ are shown to be able to work perfectly at low temperatures. A peak external quantum efficiency (EQE) of 32.8%, corresponding to an internal quantum efficiency of 100%, is achieved at 45 K. Importantly, the devices show almost no degradation after working at a constant current density of 200 mA m⁻² for 330 h. The enhanced EQEs at low temperatures result from the increased photoluminescence quantum efficiencies of the perovskite, which is caused by the increased radiative recombination rate. Spectroscopic and calculation results suggest that the phase transitions of the FAPbI₃ play an important role for the enhancement of exciton binding energy, which increases the recombination rate.

Original language	English
Article number	2006302
Journal	Advanced Materials
Volume	33
Issue number	14
DOIs	https://doi.org/10.1002/adma.202006302
State	Published - 8 Apr 2021

Keywords

high efficiency
high stability
low temperature
perovskite light-emitting diodes

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10.1002/adma.202006302

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title = "Perovskite Light-Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures",

abstract = "Room-temperature-high-efficiency light-emitting diodes based on metal halide perovskite FAPbI3 are shown to be able to work perfectly at low temperatures. A peak external quantum efficiency (EQE) of 32.8%, corresponding to an internal quantum efficiency of 100%, is achieved at 45 K. Importantly, the devices show almost no degradation after working at a constant current density of 200 mA m−2 for 330 h. The enhanced EQEs at low temperatures result from the increased photoluminescence quantum efficiencies of the perovskite, which is caused by the increased radiative recombination rate. Spectroscopic and calculation results suggest that the phase transitions of the FAPbI3 play an important role for the enhancement of exciton binding energy, which increases the recombination rate.",

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author = "Yarong He and Jiaxu Yan and Lei Xu and Bangmin Zhang and Qian Cheng and Yu Cao and Ju Zhang and Cong Tao and Yingqiang Wei and Kaichuan Wen and Zhiyuan Kuang and Chow, {Gan Moog} and Zexiang Shen and Qiming Peng and Wei Huang and Jianpu Wang",

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year = "2021",

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day = "8",

doi = "10.1002/adma.202006302",

language = "英语",

volume = "33",

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TY - JOUR

T1 - Perovskite Light-Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

AU - He, Yarong

AU - Yan, Jiaxu

AU - Xu, Lei

AU - Zhang, Bangmin

AU - Cheng, Qian

AU - Cao, Yu

AU - Zhang, Ju

AU - Tao, Cong

AU - Wei, Yingqiang

AU - Wen, Kaichuan

AU - Kuang, Zhiyuan

AU - Chow, Gan Moog

AU - Shen, Zexiang

AU - Peng, Qiming

AU - Huang, Wei

AU - Wang, Jianpu

PY - 2021/4/8

Y1 - 2021/4/8

N2 - Room-temperature-high-efficiency light-emitting diodes based on metal halide perovskite FAPbI3 are shown to be able to work perfectly at low temperatures. A peak external quantum efficiency (EQE) of 32.8%, corresponding to an internal quantum efficiency of 100%, is achieved at 45 K. Importantly, the devices show almost no degradation after working at a constant current density of 200 mA m−2 for 330 h. The enhanced EQEs at low temperatures result from the increased photoluminescence quantum efficiencies of the perovskite, which is caused by the increased radiative recombination rate. Spectroscopic and calculation results suggest that the phase transitions of the FAPbI3 play an important role for the enhancement of exciton binding energy, which increases the recombination rate.

AB - Room-temperature-high-efficiency light-emitting diodes based on metal halide perovskite FAPbI3 are shown to be able to work perfectly at low temperatures. A peak external quantum efficiency (EQE) of 32.8%, corresponding to an internal quantum efficiency of 100%, is achieved at 45 K. Importantly, the devices show almost no degradation after working at a constant current density of 200 mA m−2 for 330 h. The enhanced EQEs at low temperatures result from the increased photoluminescence quantum efficiencies of the perovskite, which is caused by the increased radiative recombination rate. Spectroscopic and calculation results suggest that the phase transitions of the FAPbI3 play an important role for the enhancement of exciton binding energy, which increases the recombination rate.

KW - high efficiency

KW - high stability

KW - low temperature

KW - perovskite light-emitting diodes

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DO - 10.1002/adma.202006302

M3 - 文章

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AN - SCOPUS:85101925703

SN - 0935-9648

VL - 33

JO - Advanced Materials

JF - Advanced Materials

IS - 14

M1 - 2006302

ER -

Perovskite Light-Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

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Keywords

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