Potential energy surface survey towards prediction of a new radical [H 2,Si,C,N]

Qiang Wang, Yi Hong Ding, Chia Chung Sun

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

While the cyanomethyl radical CH2CN has been detected in space and extensively studied, the silicon-analogue [H2,Si,C,N] is still unknown even in laboratory and has never been studied in spite of experimental expectation. Here, we present a detailed theoretical investigation on the doublet [H2,Si,C,N] potential energy surfaces including 21 minimum isomers and 44 interconversion transition states at the Gaussian-3//B3LYP/6- 31G(d) and CSB-QB3 levels. The former three low-lying isomers within 10 kcal/mol are bent H2Si-C≡N| 1 (0.0 kcal/mol), linear H2CNSi 3 (0.8) with resonating structures H2C=N=Si| ↔ H2C=N=Si| and bent H 2SiN≡C| 2 (6.5), for which high conversion barriers exist between them. Additionally, five isomers HCNSiH 7 (26.6), H 2NCSi 5 (30.6), H2CSiN 4 (58.5), HCSiNH 10a (63.5) and 10b (60.1) each have considerable barriers. Interesting features such as the intra-and inter-donor-acceptor bonding, the cumulenic silicon-bonding and silylene are revealed. Future experimental characterization and astrophysical detection of the eight [H2,Si,C,N] isomers, especially the former three low-lying species 1, 3 and 2, are strongly recommended. The accurate spectroscopic data at the QCISD/6-311G(d,p) level are provided.

Original languageEnglish
Pages (from-to)205-216
Number of pages12
JournalChemical Physics
Volume316
Issue number1-3
DOIs
StatePublished - 19 Sep 2005
Externally publishedYes

Keywords

  • Potential energy surfaces
  • Radical
  • Theoretical computation
  • [H,Si,C,N]

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