TY - JOUR
T1 - Probing Polymorphic Stacking Domains in Mechanically Exfoliated Two-Dimensional Nanosheets Using Atomic Force Microscopy and Ultralow-Frequency Raman Spectroscopy
AU - Pei, Chengjie
AU - Zhang, Jindong
AU - Li, Hai
N1 - Publisher Copyright:
© 2024 by the authors.
PY - 2024/2
Y1 - 2024/2
N2 - As one of the key features of two-dimensional (2D) layered materials, stacking order has been found to play an important role in modulating the interlayer interactions of 2D materials, potentially affecting their electronic and other properties as a consequence. In this work, ultralow-frequency (ULF) Raman spectroscopy, electrostatic force microscopy (EFM), and high-resolution atomic force microscopy (HR-AFM) were used to systematically study the effect of stacking order on the interlayer interactions as well as electrostatic screening of few-layer polymorphic molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2) nanosheets. The stacking order difference was first confirmed by measuring the ULF Raman spectrum of the nanosheets with polymorphic stacking domains. The atomic lattice arrangement revealed using HR-AFM also clearly showed a stacking order difference. In addition, EFM phase imaging clearly presented the distribution of the stacking domains in the mechanically exfoliated nanosheets, which could have arisen from electrostatic screening. The results indicate that EFM in combination with ULF Raman spectroscopy could be a simple, fast, and high-resolution method for probing the distribution of polymorphic stacking domains in 2D transition metal dichalcogenide materials. Our work might be promising for correlating the interlayer interactions of TMDC nanosheets with stacking order, a topic of great interest with regard to modulating their optoelectronic properties.
AB - As one of the key features of two-dimensional (2D) layered materials, stacking order has been found to play an important role in modulating the interlayer interactions of 2D materials, potentially affecting their electronic and other properties as a consequence. In this work, ultralow-frequency (ULF) Raman spectroscopy, electrostatic force microscopy (EFM), and high-resolution atomic force microscopy (HR-AFM) were used to systematically study the effect of stacking order on the interlayer interactions as well as electrostatic screening of few-layer polymorphic molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2) nanosheets. The stacking order difference was first confirmed by measuring the ULF Raman spectrum of the nanosheets with polymorphic stacking domains. The atomic lattice arrangement revealed using HR-AFM also clearly showed a stacking order difference. In addition, EFM phase imaging clearly presented the distribution of the stacking domains in the mechanically exfoliated nanosheets, which could have arisen from electrostatic screening. The results indicate that EFM in combination with ULF Raman spectroscopy could be a simple, fast, and high-resolution method for probing the distribution of polymorphic stacking domains in 2D transition metal dichalcogenide materials. Our work might be promising for correlating the interlayer interactions of TMDC nanosheets with stacking order, a topic of great interest with regard to modulating their optoelectronic properties.
KW - atomic force microscopy
KW - electrostatic screening
KW - stacking order
KW - transition metal dichalcogenides
KW - ultralow-frequency Raman spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=85185666745&partnerID=8YFLogxK
U2 - 10.3390/nano14040339
DO - 10.3390/nano14040339
M3 - 文章
AN - SCOPUS:85185666745
SN - 2079-4991
VL - 14
JO - Nanomaterials
JF - Nanomaterials
IS - 4
M1 - 339
ER -