Realization of vertical metal semiconductor heterostructures via solution phase epitaxy

Xiaoshan Wang; Zhiwei Wang; Jindong Zhang; Xiang Wang; Zhipeng Zhang; Jialiang Wang; Zhaohua Zhu; Zhuoyao Li; Yao Liu; Xuefeng Hu; Junwen Qiu; Guohua Hu; Bo Chen; Ning Wang; Qiyuan He; Junze Chen; Jiaxu Yan; Wei Zhang; Tawfique Hasan; Shaozhou Li; Hai Li; Hua Zhang; Qiang Wang; Xiao Huang; Wei Huang

doi:10.1038/s41467-018-06053-z

Realization of vertical metal semiconductor heterostructures via solution phase epitaxy

Xiaoshan Wang, Zhiwei Wang, Jindong Zhang, Xiang Wang, Zhipeng Zhang, Jialiang Wang, Zhaohua Zhu, Zhuoyao Li, Yao Liu, Xuefeng Hu, Junwen Qiu, Guohua Hu, Bo Chen, Ning Wang, Qiyuan He, Junze Chen, Jiaxu Yan, Wei Zhang, Tawfique Hasan, Shaozhou LiHai Li, Hua Zhang, Qiang Wang, Xiao Huang, Wei Huang

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phases. Herein, we report, based on experimental and simulation results, that alloying between 1T-SnS₂and 1T-WS₂induces a charge redistribution in Sn and W to realize metallic Sn_0.5W_0.5S₂nanosheets. These nanosheets are epitaxially deposited on surfaces of semiconducting SnS₂nanoplates to form vertical heterostructures. The ohmic-like contact formed at the Sn_0.5W_0.5S₂/SnS₂heterointerface affords rapid transport of charge carriers, and allows for the fabrication of fast photodetectors. Such facile charge transfer, combined with a high surface affinity for acetone molecules, further enables their use as highly selective 100 ppb level acetone sensors. Our work suggests that combining compositional and structural control in solution-phase epitaxy holds promises for solution-processible thin-film optoelectronics and sensors.

Original language	English
Article number	3611
Journal	Nature Communications
Volume	9
Issue number	1
DOIs	https://doi.org/10.1038/s41467-018-06053-z
State	Published - 1 Dec 2018

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Wang, X., Wang, Z., Zhang, J., Wang, X., Zhang, Z., Wang, J., Zhu, Z., Li, Z., Liu, Y., Hu, X., Qiu, J., Hu, G., Chen, B., Wang, N., He, Q., Chen, J., Yan, J., Zhang, W., Hasan, T., ... Huang, W. (2018). Realization of vertical metal semiconductor heterostructures via solution phase epitaxy. Nature Communications, 9(1), Article 3611. https://doi.org/10.1038/s41467-018-06053-z

@article{d2235c7a04bc44d29397ef5d72b34faa,

title = "Realization of vertical metal semiconductor heterostructures via solution phase epitaxy",

abstract = "The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phases. Herein, we report, based on experimental and simulation results, that alloying between 1T-SnS2and 1T-WS2induces a charge redistribution in Sn and W to realize metallic Sn0.5W0.5S2nanosheets. These nanosheets are epitaxially deposited on surfaces of semiconducting SnS2nanoplates to form vertical heterostructures. The ohmic-like contact formed at the Sn0.5W0.5S2/SnS2heterointerface affords rapid transport of charge carriers, and allows for the fabrication of fast photodetectors. Such facile charge transfer, combined with a high surface affinity for acetone molecules, further enables their use as highly selective 100 ppb level acetone sensors. Our work suggests that combining compositional and structural control in solution-phase epitaxy holds promises for solution-processible thin-film optoelectronics and sensors.",

author = "Xiaoshan Wang and Zhiwei Wang and Jindong Zhang and Xiang Wang and Zhipeng Zhang and Jialiang Wang and Zhaohua Zhu and Zhuoyao Li and Yao Liu and Xuefeng Hu and Junwen Qiu and Guohua Hu and Bo Chen and Ning Wang and Qiyuan He and Junze Chen and Jiaxu Yan and Wei Zhang and Tawfique Hasan and Shaozhou Li and Hai Li and Hua Zhang and Qiang Wang and Xiao Huang and Wei Huang",

note = "Publisher Copyright: {\textcopyright} 2018, The Author(s).",

year = "2018",

month = dec,

day = "1",

doi = "10.1038/s41467-018-06053-z",

language = "英语",

volume = "9",

journal = "Nature Communications",

issn = "2041-1723",

publisher = "Nature Research",

number = "1",

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Wang, X, Wang, Z, Zhang, J, Wang, X, Zhang, Z, Wang, J, Zhu, Z, Li, Z, Liu, Y, Hu, X, Qiu, J, Hu, G, Chen, B, Wang, N, He, Q, Chen, J, Yan, J, Zhang, W, Hasan, T, Li, S, Li, H, Zhang, H, Wang, Q , Huang, X & Huang, W 2018, 'Realization of vertical metal semiconductor heterostructures via solution phase epitaxy', Nature Communications, vol. 9, no. 1, 3611. https://doi.org/10.1038/s41467-018-06053-z

TY - JOUR

T1 - Realization of vertical metal semiconductor heterostructures via solution phase epitaxy

AU - Wang, Xiaoshan

AU - Wang, Zhiwei

AU - Zhang, Jindong

AU - Wang, Xiang

AU - Zhang, Zhipeng

AU - Wang, Jialiang

AU - Zhu, Zhaohua

AU - Li, Zhuoyao

AU - Liu, Yao

AU - Hu, Xuefeng

AU - Qiu, Junwen

AU - Hu, Guohua

AU - Chen, Bo

AU - Wang, Ning

AU - He, Qiyuan

AU - Chen, Junze

AU - Yan, Jiaxu

AU - Zhang, Wei

AU - Hasan, Tawfique

AU - Li, Shaozhou

AU - Li, Hai

AU - Zhang, Hua

AU - Wang, Qiang

AU - Huang, Xiao

AU - Huang, Wei

PY - 2018/12/1

Y1 - 2018/12/1

N2 - The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phases. Herein, we report, based on experimental and simulation results, that alloying between 1T-SnS2and 1T-WS2induces a charge redistribution in Sn and W to realize metallic Sn0.5W0.5S2nanosheets. These nanosheets are epitaxially deposited on surfaces of semiconducting SnS2nanoplates to form vertical heterostructures. The ohmic-like contact formed at the Sn0.5W0.5S2/SnS2heterointerface affords rapid transport of charge carriers, and allows for the fabrication of fast photodetectors. Such facile charge transfer, combined with a high surface affinity for acetone molecules, further enables their use as highly selective 100 ppb level acetone sensors. Our work suggests that combining compositional and structural control in solution-phase epitaxy holds promises for solution-processible thin-film optoelectronics and sensors.

AB - The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phases. Herein, we report, based on experimental and simulation results, that alloying between 1T-SnS2and 1T-WS2induces a charge redistribution in Sn and W to realize metallic Sn0.5W0.5S2nanosheets. These nanosheets are epitaxially deposited on surfaces of semiconducting SnS2nanoplates to form vertical heterostructures. The ohmic-like contact formed at the Sn0.5W0.5S2/SnS2heterointerface affords rapid transport of charge carriers, and allows for the fabrication of fast photodetectors. Such facile charge transfer, combined with a high surface affinity for acetone molecules, further enables their use as highly selective 100 ppb level acetone sensors. Our work suggests that combining compositional and structural control in solution-phase epitaxy holds promises for solution-processible thin-film optoelectronics and sensors.

UR - http://www.scopus.com/inward/record.url?scp=85052938304&partnerID=8YFLogxK

U2 - 10.1038/s41467-018-06053-z

DO - 10.1038/s41467-018-06053-z

M3 - 文章

C2 - 30190475

AN - SCOPUS:85052938304

SN - 2041-1723

VL - 9

JO - Nature Communications

JF - Nature Communications

IS - 1

M1 - 3611

ER -

Realization of vertical metal semiconductor heterostructures via solution phase epitaxy

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