TY - JOUR
T1 - Spin coating epitaxial heterodimensional tin perovskites for light-emitting diodes
AU - Min, Hao
AU - Wang, Nana
AU - Chen, Nana
AU - Tong, Yunfang
AU - Wang, Yujiao
AU - Wang, Jiaqi
AU - Liu, Jinglong
AU - Wang, Saixue
AU - Wu, Xiao
AU - Yang, Pinghui
AU - Shi, Haokun
AU - Zhuo, Chunxue
AU - Chen, Qi
AU - Li, Jingwei
AU - Zhang, Daliang
AU - Lu, Xinhui
AU - Zhu, Chao
AU - Peng, Qiming
AU - Zhu, Lin
AU - Chang, Jin
AU - Huang, Wei
AU - Wang, Jianpu
N1 - Publisher Copyright:
© The Author(s), under exclusive licence to Springer Nature Limited 2024.
PY - 2024/5
Y1 - 2024/5
N2 - Environmentally friendly tin (Sn) perovskites have received considerable attention due to their great potential for replacing their toxic lead counterparts in applications of photovoltaics and light-emitting diodes (LEDs). However, the device performance of Sn perovskites lags far behind that of lead perovskites, and the highest reported external quantum efficiencies of near-infrared Sn perovskite LEDs are below 10%. The poor performance stems mainly from the numerous defects within Sn perovskite crystallites and grain boundaries, leading to serious non-radiative recombination. Various epitaxy methods have been introduced to obtain high-quality perovskites, although their sophisticated processes limit the scalable fabrication of functional devices. Here we demonstrate that epitaxial heterodimensional Sn perovskite films can be fabricated using a spin-coating process, and efficient LEDs with an external quantum efficiency of 11.6% can be achieved based on these films. The film is composed of a two-dimensional perovskite layer and a three-dimensional perovskite layer, which is highly ordered and has a well-defined interface with minimal interfacial areas between the different dimensional perovskites. This unique nanostructure is formed through direct spin coating of the perovskite precursor solution with tryptophan and SnF2 additives onto indium tin oxide glass. We believe that our approach will provide new opportunities for further developing high-performance optoelectronic devices based on heterodimensional perovskites.
AB - Environmentally friendly tin (Sn) perovskites have received considerable attention due to their great potential for replacing their toxic lead counterparts in applications of photovoltaics and light-emitting diodes (LEDs). However, the device performance of Sn perovskites lags far behind that of lead perovskites, and the highest reported external quantum efficiencies of near-infrared Sn perovskite LEDs are below 10%. The poor performance stems mainly from the numerous defects within Sn perovskite crystallites and grain boundaries, leading to serious non-radiative recombination. Various epitaxy methods have been introduced to obtain high-quality perovskites, although their sophisticated processes limit the scalable fabrication of functional devices. Here we demonstrate that epitaxial heterodimensional Sn perovskite films can be fabricated using a spin-coating process, and efficient LEDs with an external quantum efficiency of 11.6% can be achieved based on these films. The film is composed of a two-dimensional perovskite layer and a three-dimensional perovskite layer, which is highly ordered and has a well-defined interface with minimal interfacial areas between the different dimensional perovskites. This unique nanostructure is formed through direct spin coating of the perovskite precursor solution with tryptophan and SnF2 additives onto indium tin oxide glass. We believe that our approach will provide new opportunities for further developing high-performance optoelectronic devices based on heterodimensional perovskites.
UR - http://www.scopus.com/inward/record.url?scp=85182245919&partnerID=8YFLogxK
U2 - 10.1038/s41565-023-01588-9
DO - 10.1038/s41565-023-01588-9
M3 - 文章
C2 - 38216685
AN - SCOPUS:85182245919
SN - 1748-3387
VL - 19
SP - 632
EP - 637
JO - Nature Nanotechnology
JF - Nature Nanotechnology
IS - 5
ER -