Abstract
The synthesis of the faceted single-crystalline h-AlN nanotubes with the length of a few micrometers and diameters from 30 to 80 nm is first reported. This provides an ideal substrate for the construction of GaN-based nanoheterostructures in future nanoelectronics. The experimental results suggest the further extensive experimental and theoretical studies on the promising nonlayered nanotubular structures.
Original language | English |
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Pages (from-to) | 10176-10177 |
Number of pages | 2 |
Journal | Journal of the American Chemical Society |
Volume | 125 |
Issue number | 34 |
DOIs | |
State | Published - 27 Aug 2003 |