Textured NaxCoO2 Ceramics Sintered from Hydrothermal Platelet Nanocrystals: Growth Mechanism and Transport Properties

Wei Zhang, Pengcheng Liu, Yifeng Wang, Kongjun Zhu, Guoan Tai, Jinsong Liu, Jing Wang, Kang Yan, Jianhui Zhang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Nanostructuring is an effective approach to improve thermoelectric (TE) performance, which is caused by the interface and quantum effects on electron and phonon transport. For a typical layered structure such as sodium cobalt (NCO), a highly textured ceramic with nanostructure is beneficial for the carrier transport properties due to the strong anisotropy. In this paper, we established a textured NCO ceramic with highly oriented single crystals in nanoscale. The Na0.6CoO2 platelet crystals were prepared by a one-step hydrothermal method. The growth mechanism was revealed to involve dissolution–recrystallization and exchange reactions. NCO TE ceramics fabricated by a press-aided spark plasma sintering method showed a high degree of texturing, with the platelet crystals basically lying along the in-plane direction perpendicular to the press direction. TE properties of the textured NCO ceramics showed a strong anisotropic behavior. The in-plane electrical conductivity was considerably larger than the out-of-plane data because of fewer grain boundaries and interfaces that existed in the in-plane direction. Moreover, the in-plane Seebeck coefficient was higher because of the anisotropic electronic nature of NCO. Although the in-plane thermal conductivity was high, a prior ZT value was enabled for these NCO ceramics along this direction because of the dominant electrical transport. This finding provides a new approach to prepare highly oriented ceramics.

Original languageEnglish
Pages (from-to)4070-4077
Number of pages8
JournalJournal of Electronic Materials
Volume47
Issue number7
DOIs
StatePublished - 1 Jul 2018

Keywords

  • NaCoO crystal
  • one-step hydrothermal method
  • texture ceramic
  • thermoelectric properties

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