The effects of iodine doping on the thermoelectric properties of Zn4 Sb3 at low temperatures

L. Pan; X. Y. Qin; M. Liu

doi:10.1016/j.ssc.2009.11.031

The effects of iodine doping on the thermoelectric properties of Zn₄ Sb₃ at low temperatures

L. Pan, X. Y. Qin, M. Liu

CAS - Institute of Solid State Physics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The thermoelectric properties of iodine-doped compounds Zn₄(Sb_1-xI_x)₃ (x = 0, 0.005, 0.01, 0.015) have been studied at temperatures from 5 to 310 K. The results indicate that the low-temperature (T < 300 K) thermal conductivity λ of moderately doped Zn₄(Sb_0.995I_0.005)₃ reduced remarkably as compared with that of Zn₄Sb₃ due to the enhanced impurity (dopant) scattering of phonons. The electrical resistivity and Seebeck coefficient were found to increase monotonically with the increase in the iodine content, which would reflect the decrease in carrier concentration due to the substitution of I for Sb. Moreover, the lightly doped compound Zn₄(Sb_0.995I_0.005)₃ exhibited the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, was about 1.2 times larger than that of β- Zn₄Sb₃ obtained in the present study at 300 K.

Original language	English
Pages (from-to)	346-349
Number of pages	4
Journal	Solid State Communications
Volume	150
Issue number	7-8
DOIs	https://doi.org/10.1016/j.ssc.2009.11.031
State	Published - Feb 2010
Externally published	Yes

Keywords

A. Semiconductors
D. Thermoelectric
E. Hot-pressing

Access to Document

10.1016/j.ssc.2009.11.031

Cite this

@article{306cabcb3d2841eaa54b1e72b5c3e266,

title = "The effects of iodine doping on the thermoelectric properties of Zn4 Sb3 at low temperatures",

abstract = "The thermoelectric properties of iodine-doped compounds Zn4(Sb1-xIx)3 (x = 0, 0.005, 0.01, 0.015) have been studied at temperatures from 5 to 310 K. The results indicate that the low-temperature (T < 300 K) thermal conductivity λ of moderately doped Zn4(Sb0.995I0.005)3 reduced remarkably as compared with that of Zn4Sb3 due to the enhanced impurity (dopant) scattering of phonons. The electrical resistivity and Seebeck coefficient were found to increase monotonically with the increase in the iodine content, which would reflect the decrease in carrier concentration due to the substitution of I for Sb. Moreover, the lightly doped compound Zn4(Sb0.995I0.005)3 exhibited the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, was about 1.2 times larger than that of β- Zn4Sb3 obtained in the present study at 300 K.",

keywords = "A. Semiconductors, D. Thermoelectric, E. Hot-pressing",

author = "L. Pan and Qin, {X. Y.} and M. Liu",

year = "2010",

month = feb,

doi = "10.1016/j.ssc.2009.11.031",

language = "英语",

volume = "150",

pages = "346--349",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "7-8",

}

TY - JOUR

T1 - The effects of iodine doping on the thermoelectric properties of Zn4 Sb3 at low temperatures

AU - Pan, L.

AU - Qin, X. Y.

AU - Liu, M.

PY - 2010/2

Y1 - 2010/2

N2 - The thermoelectric properties of iodine-doped compounds Zn4(Sb1-xIx)3 (x = 0, 0.005, 0.01, 0.015) have been studied at temperatures from 5 to 310 K. The results indicate that the low-temperature (T < 300 K) thermal conductivity λ of moderately doped Zn4(Sb0.995I0.005)3 reduced remarkably as compared with that of Zn4Sb3 due to the enhanced impurity (dopant) scattering of phonons. The electrical resistivity and Seebeck coefficient were found to increase monotonically with the increase in the iodine content, which would reflect the decrease in carrier concentration due to the substitution of I for Sb. Moreover, the lightly doped compound Zn4(Sb0.995I0.005)3 exhibited the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, was about 1.2 times larger than that of β- Zn4Sb3 obtained in the present study at 300 K.

AB - The thermoelectric properties of iodine-doped compounds Zn4(Sb1-xIx)3 (x = 0, 0.005, 0.01, 0.015) have been studied at temperatures from 5 to 310 K. The results indicate that the low-temperature (T < 300 K) thermal conductivity λ of moderately doped Zn4(Sb0.995I0.005)3 reduced remarkably as compared with that of Zn4Sb3 due to the enhanced impurity (dopant) scattering of phonons. The electrical resistivity and Seebeck coefficient were found to increase monotonically with the increase in the iodine content, which would reflect the decrease in carrier concentration due to the substitution of I for Sb. Moreover, the lightly doped compound Zn4(Sb0.995I0.005)3 exhibited the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, was about 1.2 times larger than that of β- Zn4Sb3 obtained in the present study at 300 K.

KW - A. Semiconductors

KW - D. Thermoelectric

KW - E. Hot-pressing

UR - http://www.scopus.com/inward/record.url?scp=75749088544&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2009.11.031

DO - 10.1016/j.ssc.2009.11.031

M3 - 文章

AN - SCOPUS:75749088544

SN - 0038-1098

VL - 150

SP - 346

EP - 349

JO - Solid State Communications

JF - Solid State Communications

IS - 7-8

ER -

The effects of iodine doping on the thermoelectric properties of Zn₄ Sb₃ at low temperatures

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this