Abstract
The zero/negative thermal expansion (ZTE/NTE), which is an intriguing physical property of solids, has been observed in a few families of materials. ZTE materials possess practical applications in specific circumstances such as space-related applications, engineering structures and precision instrument. Generally, NTE materials are used as additives to form a composite of the ZTE material with positive thermal expansion material. It is still a tremendous challenge to design new families of ZTE/NTE materials. Herein, we presented a temperature-dependent single crystal structure analysis in 110-300 K for a layered (NH4)2V3O8, which crystallizes in a tetragonal space group P4bm and comprises mixed valence [V3O82-]∞ monolayers and NH4+ residual in the interlayer spaces. Along the c-axis, (NH4)2V3O8 demonstrated uniaxial expansion behaviors, i.e., ZTE with αc = -1.10 × 10-6 K-1 in 110-170 K and NTE with αc = -16.25 × 10-6 K-1 in 170-220 K. Along the a-axis, (NH4)2V3O8 exhibited ZTE with αa = + 2.06 × 10-6 K-1 in 240-300 K. The mechanisms of ZTE and NTE were explored using structural analysis. The conduction of NH4+ ions in the interlayer space was studied, indicating that the conductivity rapidly rises with the expansion of interlayer space at temperatures of >293 K. This study discloses that layered vanadates are promising ZTE/NTE materials.
Original language | English |
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Pages (from-to) | 10638-10644 |
Number of pages | 7 |
Journal | Dalton Transactions |
Volume | 49 |
Issue number | 30 |
DOIs | |
State | Published - 14 Aug 2020 |