TY - JOUR
T1 - A Capacitor-type Faradaic Junction for Direct Solar Energy Conversion and Storage
AU - Wang, Pin
AU - Chen, Xiangtian
AU - Sun, Gengzhi
AU - Wang, Cheng
AU - Luo, Jun
AU - Yang, Liuqing
AU - Lv, Jun
AU - Yao, Yingfang
AU - Luo, Wenjun
AU - Zou, Zhigang
N1 - Publisher Copyright:
© 2020 Wiley-VCH GmbH
PY - 2021/1/18
Y1 - 2021/1/18
N2 - Two-electrode solar rechargeable devices trigger intense attention due to their potential applications in solar energy conversion and storage. However, interface energy barriers lead to severe loss of output voltage and negligible dark discharge current. Therefore, external biases are required for dark discharge in these devices, limiting their practical applications. Herein, we report a new two-electrode device of Si/WO3/H2SO4(aq)/C that can work without bias. The device has the highest dark output power among all of the two-electrode solar rechargeable devices. The device based on a Si/WO3 junction indicates photoinduced adjustable interface barrier height during charge transfer, which can overcome the energy barrier and realize dark discharge without bias. Owing to the interface characteristics, the Si/WO3 is designated as a capacitor-type Faradaic junction.
AB - Two-electrode solar rechargeable devices trigger intense attention due to their potential applications in solar energy conversion and storage. However, interface energy barriers lead to severe loss of output voltage and negligible dark discharge current. Therefore, external biases are required for dark discharge in these devices, limiting their practical applications. Herein, we report a new two-electrode device of Si/WO3/H2SO4(aq)/C that can work without bias. The device has the highest dark output power among all of the two-electrode solar rechargeable devices. The device based on a Si/WO3 junction indicates photoinduced adjustable interface barrier height during charge transfer, which can overcome the energy barrier and realize dark discharge without bias. Owing to the interface characteristics, the Si/WO3 is designated as a capacitor-type Faradaic junction.
KW - Faradaic layer
KW - adjustable barrier height
KW - interface charge transfer
KW - photoelectrochemistry
KW - solar rechargeable device
UR - http://www.scopus.com/inward/record.url?scp=85096692220&partnerID=8YFLogxK
U2 - 10.1002/anie.202011930
DO - 10.1002/anie.202011930
M3 - 文章
C2 - 33022857
AN - SCOPUS:85096692220
SN - 1433-7851
VL - 60
SP - 1390
EP - 1395
JO - Angewandte Chemie - International Edition
JF - Angewandte Chemie - International Edition
IS - 3
ER -