A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor

Jingjing Chang; Jinjun Shao; Jie Zhang; Jishan Wu; Chunyan Chi

doi:10.1039/c3ra40504d

A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor

Jingjing Chang, Jinjun Shao, Jie Zhang, Jishan Wu, Chunyan Chi

科研成果: 期刊稿件 › 文章 › 同行评审

15 引用（Scopus）

摘要

A phthalimide-fused naphthalene diimde (NDIIC24) with a low-lying LUMO energy level (-4.21 eV) and moderate solubility was synthesized. Organic field effect transistors (OFETs) based on solution processed thin films showed typical n-channel characteristics with a high electron mobility of 0.056 cm² V^-1 s^-1 and a high on-off current ratio of 10 ⁵-10⁶. The devices exhibited very good air stability and operating stability. Complementary inverters based on n-type NDIIC24 and p-type TIPS-pentacene demonstrated a maximum voltage gain (-dV_OUT/dV _IN) of 64.

源语言	英语
页（从-至）	6775-6778
页数	4
期刊	RSC Advances
卷	3
期	19
DOI	https://doi.org/10.1039/c3ra40504d
出版状态	已出版 - 21 5月 2013
已对外发布	是

访问文件

10.1039/c3ra40504d

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{3463d9b18de9416db3caf68a5dc06c1b,

title = "A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor",

abstract = "A phthalimide-fused naphthalene diimde (NDIIC24) with a low-lying LUMO energy level (-4.21 eV) and moderate solubility was synthesized. Organic field effect transistors (OFETs) based on solution processed thin films showed typical n-channel characteristics with a high electron mobility of 0.056 cm2 V-1 s-1 and a high on-off current ratio of 10 5-106. The devices exhibited very good air stability and operating stability. Complementary inverters based on n-type NDIIC24 and p-type TIPS-pentacene demonstrated a maximum voltage gain (-dVOUT/dV IN) of 64.",

author = "Jingjing Chang and Jinjun Shao and Jie Zhang and Jishan Wu and Chunyan Chi",

year = "2013",

month = may,

day = "21",

doi = "10.1039/c3ra40504d",

language = "英语",

volume = "3",

pages = "6775--6778",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "19",

}

TY - JOUR

T1 - A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor

AU - Chang, Jingjing

AU - Shao, Jinjun

AU - Zhang, Jie

AU - Wu, Jishan

AU - Chi, Chunyan

PY - 2013/5/21

Y1 - 2013/5/21

N2 - A phthalimide-fused naphthalene diimde (NDIIC24) with a low-lying LUMO energy level (-4.21 eV) and moderate solubility was synthesized. Organic field effect transistors (OFETs) based on solution processed thin films showed typical n-channel characteristics with a high electron mobility of 0.056 cm2 V-1 s-1 and a high on-off current ratio of 10 5-106. The devices exhibited very good air stability and operating stability. Complementary inverters based on n-type NDIIC24 and p-type TIPS-pentacene demonstrated a maximum voltage gain (-dVOUT/dV IN) of 64.

AB - A phthalimide-fused naphthalene diimde (NDIIC24) with a low-lying LUMO energy level (-4.21 eV) and moderate solubility was synthesized. Organic field effect transistors (OFETs) based on solution processed thin films showed typical n-channel characteristics with a high electron mobility of 0.056 cm2 V-1 s-1 and a high on-off current ratio of 10 5-106. The devices exhibited very good air stability and operating stability. Complementary inverters based on n-type NDIIC24 and p-type TIPS-pentacene demonstrated a maximum voltage gain (-dVOUT/dV IN) of 64.

UR - http://www.scopus.com/inward/record.url?scp=84876707884&partnerID=8YFLogxK

U2 - 10.1039/c3ra40504d

DO - 10.1039/c3ra40504d

M3 - 文章

AN - SCOPUS:84876707884

SN - 2046-2069

VL - 3

SP - 6775

EP - 6778

JO - RSC Advances

JF - RSC Advances

IS - 19

ER -

A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor

摘要

访问文件

其它文件与链接

指纹

引用此