Control of Resistive Switching Voltage by Nanoparticle-Decorated Wrinkle Interface

Huiwu Mao, Zhe Zhou, Xiangjing Wang, Chaoyi Ban, Yamei Ding, Tao Sun, Yuhang Yin, Zhengdong Liu, Juqing Liu, Wei Huang

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17 引用 (Scopus)

摘要

Control of resistive switching voltage in nonvolatile memory devices plays a critical role in building commercial ultra-low power data storage technology. Here, an effective strategy to control the resistive switching voltage in polymer memory devices by interfacial engineering is presented. By creating a wrinkled surface in reduced graphene oxide (rGO) film as the conductive electrode, an electrical bistable phenomenon is observed in polymer diode with this rGO electrode, with the feature of a write-once-read-many-times nonvolatile memory effect. By further employing silver nanoparticles and controlling their density at the wrinkled rGO electrode/polymer interface, the optimized device exhibits a high performance nonvolatile memory effect with an ultra-low switching voltage of 0.9 V, high ON/OFF ratio of 1000, and desirable long retention time over 10 4 s. To the best knowledge, the value of switching voltage is much lower than that of previous related polymer memory devices. This study paves a new way toward ultra-low power manufacturing of nonvolatile polymer memory devices.

源语言英语
文章编号1800503
期刊Advanced Electronic Materials
5
5
DOI
出版状态已出版 - 5月 2019

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