摘要
Separation behavior of photo-generated electrons and holes is systematically investigated on anatase TiO2 with selectively etched {0 0 1} facet. Results indicate that the {0 0 1} facet etching degree and the resulted Ti3+ impurity centers are increased along with the F ion concentration in the acid environment. However, both the etched {0 0 1} facet and the Ti3+ centers have little effect on trapping the photo-generated electrons. Thus all the Au particles are photo-deposited on the {1 0 1} facet, while the etched {0 0 1} facet remains blank. The present work confirms that the {0 0 1}-{1 0 1} heterojunction is really helpful to separate the photo-generated electrons and holes. This behavior is mainly associated with the intrinsic bulk crystal structure, but not the external crystal defects.
源语言 | 英语 |
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页(从-至) | 29-31 |
页数 | 3 |
期刊 | Materials Letters |
卷 | 158 |
DOI | |
出版状态 | 已出版 - 8 6月 2015 |