TY - JOUR
T1 - Effect of ZnO/Er2O3 addition on microwave properties of (Zr0.8Sn0.2)TiO4 ceramics
AU - Wang, Linzi
AU - Wang, Lixi
AU - Wang, Zhefei
AU - Huang, Baoyu
AU - Zhang, Qitu
AU - Fu, Zhenxiao
N1 - Publisher Copyright:
© 2015, Springer Science+Business Media New York.
PY - 2016/4/1
Y1 - 2016/4/1
N2 - (Zr0.8Sn0.2)TiO4 (ZST) ceramics were prepared by conventional solid-state ceramic method and investigated by XRD, SEM and dielectric measurements. 1 wt% ZnO and different concentrations of Er2O3 ranging from 0.25 to 1 wt% were introduced to study their effect on the densification, microstructure and microwave dielectric properties of the ZST ceramics. It was found that the addition of ZnO and Er2O3 can significantly improved the density at lower temperature. Meanwhile, the microwave dielectric properties of ZST ceramics were also heavily influenced by the sintering aids. The maximum dielectric constant of 39.2 and Q × f value of 28,000 were found to be for the samples added with 0.25 wt% of Er2O3 sintered at 1240 °C for 4 h.
AB - (Zr0.8Sn0.2)TiO4 (ZST) ceramics were prepared by conventional solid-state ceramic method and investigated by XRD, SEM and dielectric measurements. 1 wt% ZnO and different concentrations of Er2O3 ranging from 0.25 to 1 wt% were introduced to study their effect on the densification, microstructure and microwave dielectric properties of the ZST ceramics. It was found that the addition of ZnO and Er2O3 can significantly improved the density at lower temperature. Meanwhile, the microwave dielectric properties of ZST ceramics were also heavily influenced by the sintering aids. The maximum dielectric constant of 39.2 and Q × f value of 28,000 were found to be for the samples added with 0.25 wt% of Er2O3 sintered at 1240 °C for 4 h.
UR - http://www.scopus.com/inward/record.url?scp=84961193265&partnerID=8YFLogxK
U2 - 10.1007/s10854-015-4244-0
DO - 10.1007/s10854-015-4244-0
M3 - 文章
AN - SCOPUS:84961193265
SN - 0957-4522
VL - 27
SP - 3929
EP - 3933
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 4
ER -
