Effects of Se doping on thermoelectric properties of Zn4Sb3 at low-temperatures

L. Pan; X. Y. Qin; M. Liu

doi:10.1016/j.solidstatesciences.2009.11.003

Effects of Se doping on thermoelectric properties of Zn₄Sb₃ at low-temperatures

L. Pan, X. Y. Qin, M. Liu

CAS - Institute of Solid State Physics

科研成果: 期刊稿件 › 文章 › 同行评审

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摘要

The thermoelectric properties of Se-doped compounds Zn₄(Sb_1-xSe_x)₃ (x = 0, 0.005, 0.01, 0.015) have been studied. The results indicate that low-temperature (T < 300 K) thermal conductivity of moderately doped Zn₄(Sb_0.99Se_0.01)₃ reduce remarkably as compared with that of Zn₄Sb₃ due to enhanced impurity (dopant) scattering of phonons. Electrical resistivity and Seebeck coefficient are found to increase and then decrease moderately with the increase in the Se content. Moreover, the lightly doped compound Zn₄(Sb_0.99Se_0.01)₃ exhibits the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, is about 1.3 times larger than that of pure Zn₄Sb₃ at 300 K.

源语言	英语
页（从-至）	257-261
页数	5
期刊	Solid State Sciences
卷	12
期	2
DOI	https://doi.org/10.1016/j.solidstatesciences.2009.11.003
出版状态	已出版 - 2月 2010
已对外发布	是

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10.1016/j.solidstatesciences.2009.11.003

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title = "Effects of Se doping on thermoelectric properties of Zn4Sb3 at low-temperatures",

abstract = "The thermoelectric properties of Se-doped compounds Zn4(Sb1-xSex)3 (x = 0, 0.005, 0.01, 0.015) have been studied. The results indicate that low-temperature (T < 300 K) thermal conductivity of moderately doped Zn4(Sb0.99Se0.01)3 reduce remarkably as compared with that of Zn4Sb3 due to enhanced impurity (dopant) scattering of phonons. Electrical resistivity and Seebeck coefficient are found to increase and then decrease moderately with the increase in the Se content. Moreover, the lightly doped compound Zn4(Sb0.99Se0.01)3 exhibits the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, is about 1.3 times larger than that of pure Zn4Sb3 at 300 K.",

keywords = "Hot-pressing, Semiconductors, Thermoelectric",

author = "L. Pan and Qin, {X. Y.} and M. Liu",

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AU - Pan, L.

AU - Qin, X. Y.

AU - Liu, M.

PY - 2010/2

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N2 - The thermoelectric properties of Se-doped compounds Zn4(Sb1-xSex)3 (x = 0, 0.005, 0.01, 0.015) have been studied. The results indicate that low-temperature (T < 300 K) thermal conductivity of moderately doped Zn4(Sb0.99Se0.01)3 reduce remarkably as compared with that of Zn4Sb3 due to enhanced impurity (dopant) scattering of phonons. Electrical resistivity and Seebeck coefficient are found to increase and then decrease moderately with the increase in the Se content. Moreover, the lightly doped compound Zn4(Sb0.99Se0.01)3 exhibits the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, is about 1.3 times larger than that of pure Zn4Sb3 at 300 K.

AB - The thermoelectric properties of Se-doped compounds Zn4(Sb1-xSex)3 (x = 0, 0.005, 0.01, 0.015) have been studied. The results indicate that low-temperature (T < 300 K) thermal conductivity of moderately doped Zn4(Sb0.99Se0.01)3 reduce remarkably as compared with that of Zn4Sb3 due to enhanced impurity (dopant) scattering of phonons. Electrical resistivity and Seebeck coefficient are found to increase and then decrease moderately with the increase in the Se content. Moreover, the lightly doped compound Zn4(Sb0.99Se0.01)3 exhibits the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, is about 1.3 times larger than that of pure Zn4Sb3 at 300 K.

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KW - Semiconductors

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JO - Solid State Sciences

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Effects of Se doping on thermoelectric properties of Zn4Sb3 at low-temperatures

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Effects of Se doping on thermoelectric properties of Zn₄Sb₃ at low-temperatures