TY - JOUR
T1 - Effects of (Zn1/3Nb2/3)4+ co-substitution on structure and microwave dielectric properties of 0.75CaTiO3–0.25SmAlO3 ceramics
AU - Luo, Shengmin
AU - Zhang, Yajuan
AU - Wang, Qiang
AU - Que, Tao
AU - Lu, Yang
AU - Shan, Yiting
AU - Zhou, Hongqing
N1 - Publisher Copyright:
© 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2023/9
Y1 - 2023/9
N2 - 0.75CaTi1-x(Zn1/3Nb2/3) xO3-0.25SmAlO3 (CT1-xZN xSA) (0 ≤ x ≤ 0.09) ceramics were synthesized by a solid-state reaction process. The effects of (Zn1/3Nb2/3)4+ co-substitution on the structure and dielectric properties of the ceramics were investigated. Every sample presented a single orthogonal perovskite structure. Moderate amounts of (Zn1/3Nb2/3)4+ substitution effectively improved the densification, dielectric properties, flexural strength, and lowered the sintering temperature, while excessive substitution deteriorated the overall performance. Excellent properties were achieved for 0.75CaTi0.97(Zn1/3Nb2/3)0.03O3-0.25SmAlO3 ceramics sintered at 1450 °C for 5 h, including εr = 54.23, Q × f = 31,063 GHz (at 4.85 GHz), τf = + 16.7 ppm/℃, a = + 10.99 ppm/℃, R = 135.16 MPa.
AB - 0.75CaTi1-x(Zn1/3Nb2/3) xO3-0.25SmAlO3 (CT1-xZN xSA) (0 ≤ x ≤ 0.09) ceramics were synthesized by a solid-state reaction process. The effects of (Zn1/3Nb2/3)4+ co-substitution on the structure and dielectric properties of the ceramics were investigated. Every sample presented a single orthogonal perovskite structure. Moderate amounts of (Zn1/3Nb2/3)4+ substitution effectively improved the densification, dielectric properties, flexural strength, and lowered the sintering temperature, while excessive substitution deteriorated the overall performance. Excellent properties were achieved for 0.75CaTi0.97(Zn1/3Nb2/3)0.03O3-0.25SmAlO3 ceramics sintered at 1450 °C for 5 h, including εr = 54.23, Q × f = 31,063 GHz (at 4.85 GHz), τf = + 16.7 ppm/℃, a = + 10.99 ppm/℃, R = 135.16 MPa.
UR - http://www.scopus.com/inward/record.url?scp=85173113853&partnerID=8YFLogxK
U2 - 10.1007/s10854-023-11275-z
DO - 10.1007/s10854-023-11275-z
M3 - 文章
AN - SCOPUS:85173113853
SN - 0957-4522
VL - 34
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 27
M1 - 1874
ER -