Electron-electron interactions in monolayer graphene quantum capacitors

We demonstrate the effects of electron-electron (e-e) interactions in monolayer graphene quantum capacitors. Ultrathin yttrium oxide showed excellent performance as the dielectric layer in top-gate device geometry. The structure and dielectric constant of the yttrium oxide layers have been carefully studied. The inverse compressibility retrieved from the quantum capacitance agreed fairly well with the theoretical predictions for the e-e interactions in monolayer graphene at different temperatures. We found that electron-hole puddles played a significant role in the low-density carrier region in graphene. By considering the temperature-dependent charge fluctuation, we established a model to explain the round-off effect originating from the e-e interactions in monolayer graphene near the Dirac point. [Figure not available: see fulltext.]