TY - JOUR
T1 - Enhanced energy-storage properties of SrTiO3 doped (Bi1/2Na1/2)TiO3–(Bi1/2K1/2)TiO3 lead-free antiferroelectric ceramics
AU - Ye, Jiaojiao
AU - Liu, Yunfei
AU - Lu, Yinong
AU - Ding, Jianxiang
AU - Ma, Chengjian
AU - Qian, Hao
AU - Yu, Zhenglei
N1 - Publisher Copyright:
© 2014, Springer Science+Business Media New York.
PY - 2014/10
Y1 - 2014/10
N2 - The energy-storage properties of SrTiO3-doped (15, 20, 25, and 30 mol%) 0.80Bi1/2Na1/2TiO3–0.20Bi1/2K1/2TiO3 lead-free antiferroelectric ceramics were investigated by two-step sintering method. The ceramics with higher SrTiO3 content had smaller grain sizes and a more homogeneous distribution. About 25 mol% SrTiO3 doping induced antiferroelectric properties, showing a typical double hysteresis loops, accompanied by a large energy density. The first sintering temperature of the ceramics had main impact on the relative density, and the high relative density possessed large external breakdown strength. The optimum electrical performances with a low remanent polarization (Pr = 1.9 μC/cm2), a low coercive field (Ec = 1.7 kV/cm) and a large energy density (W = 0.97 J/cm3) at 10 Hz were obtained at 1,190 °C for a SrTiO3 content of 25 mol%.
AB - The energy-storage properties of SrTiO3-doped (15, 20, 25, and 30 mol%) 0.80Bi1/2Na1/2TiO3–0.20Bi1/2K1/2TiO3 lead-free antiferroelectric ceramics were investigated by two-step sintering method. The ceramics with higher SrTiO3 content had smaller grain sizes and a more homogeneous distribution. About 25 mol% SrTiO3 doping induced antiferroelectric properties, showing a typical double hysteresis loops, accompanied by a large energy density. The first sintering temperature of the ceramics had main impact on the relative density, and the high relative density possessed large external breakdown strength. The optimum electrical performances with a low remanent polarization (Pr = 1.9 μC/cm2), a low coercive field (Ec = 1.7 kV/cm) and a large energy density (W = 0.97 J/cm3) at 10 Hz were obtained at 1,190 °C for a SrTiO3 content of 25 mol%.
UR - http://www.scopus.com/inward/record.url?scp=84920258803&partnerID=8YFLogxK
U2 - 10.1007/s10854-014-2215-5
DO - 10.1007/s10854-014-2215-5
M3 - 文章
AN - SCOPUS:84920258803
SN - 0957-4522
VL - 25
SP - 4632
EP - 4637
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 10
ER -