@article{ac2a1724140641f995512fc175773ca4,
title = "Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices",
abstract = "A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.",
keywords = "flexible, graphene, memory device, reduced graphene oxide, solution process",
author = "Juqing Liu and Zongyou Yin and Xiehong Cao and Fei Zhao and Lianhui Wang and Wei Huang and Hua Zhang",
year = "2013",
month = jan,
day = "11",
doi = "10.1002/adma.201203349",
language = "英语",
volume = "25",
pages = "233--238",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-Blackwell",
number = "2",
}