TY - JOUR
T1 - Flexible Metal-Free Memory Electronic Made of π-Conjugation-Interrupted Hyperbranched Polymer Switch and Reduced Graphene Oxide Electrodes
AU - Liu, Zhengdong
AU - Song, Cheng
AU - Yin, Yuhang
AU - Wang, Xiaojing
AU - Zhang, Minjie
AU - Chang, Yongzheng
AU - Xie, Linghai
AU - Liu, Juqing
AU - Huang, Wei
N1 - Publisher Copyright:
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/6/1
Y1 - 2020/6/1
N2 - A flexible metal-free flash memory device with reduced graphene oxide films as electrodes and diarylfluorene-based π-conjugation-interrupted hyperbranched polymers (CIHPs) as active switches is reported. Two CIHPs, named PCzPF and PCzPF-PF, are synthesized via BF3•Et2O-catalyzed fluorenol’s Friedel–Crafts reaction, where the PCzPF-PF is designed by the decoration of hindrance functional groups, i.e., bulky 9-phenyl-fluorenyl (PF) moieties, at the end-groups of PCzPF. Both of the two CIHPs exhibit excellent solubility and thermal stability. The PCzPF-based device exhibits no switching effect while the PCzPF-PF-based device shows a flash type memory effect, indicating the incorporation of PF groups plays a critical role in realizing electrically bistable behaviors. In particular, the optimized memory exhibits a high ON/OFF ratio of > 3.0 × 103, long retention time of up to 1.2 × 104 s, and high mechanical stability. This work opens a new avenue for metal-free memory electronics through a low-cost and full-solution process approach.
AB - A flexible metal-free flash memory device with reduced graphene oxide films as electrodes and diarylfluorene-based π-conjugation-interrupted hyperbranched polymers (CIHPs) as active switches is reported. Two CIHPs, named PCzPF and PCzPF-PF, are synthesized via BF3•Et2O-catalyzed fluorenol’s Friedel–Crafts reaction, where the PCzPF-PF is designed by the decoration of hindrance functional groups, i.e., bulky 9-phenyl-fluorenyl (PF) moieties, at the end-groups of PCzPF. Both of the two CIHPs exhibit excellent solubility and thermal stability. The PCzPF-based device exhibits no switching effect while the PCzPF-PF-based device shows a flash type memory effect, indicating the incorporation of PF groups plays a critical role in realizing electrically bistable behaviors. In particular, the optimized memory exhibits a high ON/OFF ratio of > 3.0 × 103, long retention time of up to 1.2 × 104 s, and high mechanical stability. This work opens a new avenue for metal-free memory electronics through a low-cost and full-solution process approach.
KW - diarylfluorene
KW - flexible flash memory
KW - π-conjugation-interrupted hyperbranched polymers
UR - http://www.scopus.com/inward/record.url?scp=85084005215&partnerID=8YFLogxK
U2 - 10.1002/mame.202000050
DO - 10.1002/mame.202000050
M3 - 文章
AN - SCOPUS:85084005215
SN - 1438-7492
VL - 305
JO - Macromolecular Materials and Engineering
JF - Macromolecular Materials and Engineering
IS - 6
M1 - 2000050
ER -