摘要
Cu2SnS3 is a promising low-cost and eco-friendly thermoelectric material. However, its rigid diamond crystal structure leads to a high thermal conductivity and hence its overall poor thermoelectric properties. Here we show Ni doping at the Sn site can introduce a dense dislocation of density of ∼4.83 × 109 cm-2 to Cu2SnS3. The abundant dislocations generate a large strain within the matrix, which effectively scatters heat-carrying phonons. The resultant lowest κlatt reaches ∼0.41 W m-1 K-1 at 723 K, approaching the theoretical limit (0.30 W m-1 K-1). The regulation strategy on dislocations is expected to reduce the thermal conductivity and improve the functionalities of other diamond-like materials.
源语言 | 英语 |
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页(从-至) | 8728-8733 |
页数 | 6 |
期刊 | ACS Applied Energy Materials |
卷 | 4 |
期 | 9 |
DOI | |
出版状态 | 已出版 - 27 9月 2021 |