Improvement of Electrical Properties of Metal- Insulator Interface Based on Ar/HMDSO μ-APPJ

Xiuhan Guan, Wanyue Xiong, Liyan Wang, Xi Zhu, Zhi Fang

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

The intrinsic defects (μm ∼mm) at the metal-insulating material interface such as inevitable metal tip, may cause electric field distortion and partial discharge under electrical stress, which has become the main cause of insulation failure of power equipment. In this paper, an atmospheric pressure micro-plasmajet (μ-APPJ) with hexamethyl disiloxane (HMDSO) was used to treat the tip defects at the interface between copper metal and epoxy resin (Cu-EP), and the electrical properties of the Cu-EP interface were studied by flashover voltage and partial discharge. The results show that the intensity of the main spectral lines of the emission spectrum decreases first and then remains stable with the increase of HMDSO addition, and it reaches the best effect at 5 mL/min. The direct treatment of Cu-EP interface defects can significantly enhance the discharge intensity of μ-APPJ and improve the decomposition efficiency of HMDSO. After μ-APPJ treatment, the electrical properties of the Cu-EP interface are significantly improved, the PD initial voltage increased by 44.4%, and the average discharge charge decreased by 68.7%. In addition, the breakdown strength was also increased by 38% (from 6. 7S to 9.36 kV) after μ-APPJ treatment.

源语言英语
主期刊名2023 IEEE 4th International Conference on Electrical Materials and Power Equipment, ICEMPE 2023
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9798350334678
DOI
出版状态已出版 - 2023
活动4th IEEE International Conference on Electrical Materials and Power Equipment, ICEMPE 2023 - Shanghai, 中国
期限: 7 5月 202310 5月 2023

出版系列

姓名2023 IEEE 4th International Conference on Electrical Materials and Power Equipment, ICEMPE 2023

会议

会议4th IEEE International Conference on Electrical Materials and Power Equipment, ICEMPE 2023
国家/地区中国
Shanghai
时期7/05/2310/05/23

指纹

探究 'Improvement of Electrical Properties of Metal- Insulator Interface Based on Ar/HMDSO μ-APPJ' 的科研主题。它们共同构成独一无二的指纹。

引用此