TY - JOUR
T1 - Investigation of BiFe0.95Mn0.03Zn 0.02O3/Bi3.15Nd0.85Ti 2.9Zr0.1O12 heterostructure thin film fabricated by a chemical solution deposition technique
AU - Chen, Changchun
AU - Wang, Lurong
AU - Lu, Chunhua
AU - Xu, Zhongzi
PY - 2011/9
Y1 - 2011/9
N2 - A BiFe0.95Mn0.03Zn0.02O 3/Bi3.15Nd0.85Ti2.9Zr 0.1O12 (BFMZ/BNTZ) heterostructure thin film was prepared on Pt/Ti/SiO2/Si (1 0 0) substrate by a chemical solution deposition (CSD) technique. The structural, magnetic, dielectric properties, and leakage current of the BFMZ/BNTZ heterostructure thin film were thoroughly investigated. The analysis of X-ray diffraction (XRD) demonstrated that the BFMZ/BNTZ heterostructure thin film was of a polycrystalline perovskite structure. A slim magnetic hysteresis (M-H) loop for the BFMZ/BNTZ heterostructure thin film was observed. The dielectric constant together with dielectric loss measurement indicates that the BFMZ/BNTZ thin film exhibit a lossy dielectric with an εr of 60.5 and a tan δ of 0.392 at a frequency of 1 MHz. In addition, the leakage current density of BFMZ/BNTZ thin film measured at an applied electric field of 50 kV/cm is about 5.65×10-4 A/cm 2.
AB - A BiFe0.95Mn0.03Zn0.02O 3/Bi3.15Nd0.85Ti2.9Zr 0.1O12 (BFMZ/BNTZ) heterostructure thin film was prepared on Pt/Ti/SiO2/Si (1 0 0) substrate by a chemical solution deposition (CSD) technique. The structural, magnetic, dielectric properties, and leakage current of the BFMZ/BNTZ heterostructure thin film were thoroughly investigated. The analysis of X-ray diffraction (XRD) demonstrated that the BFMZ/BNTZ heterostructure thin film was of a polycrystalline perovskite structure. A slim magnetic hysteresis (M-H) loop for the BFMZ/BNTZ heterostructure thin film was observed. The dielectric constant together with dielectric loss measurement indicates that the BFMZ/BNTZ thin film exhibit a lossy dielectric with an εr of 60.5 and a tan δ of 0.392 at a frequency of 1 MHz. In addition, the leakage current density of BFMZ/BNTZ thin film measured at an applied electric field of 50 kV/cm is about 5.65×10-4 A/cm 2.
KW - BiFeMnZnO/Bi NdTiZrO thin film
KW - Chemical solution deposition
KW - Dielectric properties
KW - Magnetic properties
UR - http://www.scopus.com/inward/record.url?scp=82455188371&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2011.04.004
DO - 10.1016/j.mssp.2011.04.004
M3 - 文章
AN - SCOPUS:82455188371
SN - 1369-8001
VL - 14
SP - 253
EP - 256
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
IS - 3-4
ER -