摘要
To understand the formation mechanism of the solid solution, experiments were carried out at different temperatures. X-ray diffraction (XRD) patterns of the synthesized products showed the presence of AlN, Si3N4, Si or C and Al, but no SiC was detected. The results indicate that silicon nitride should first react with aluminum producing AlN and Si subsequently Si and C directly diffuse into AlN forming a 2H-AlN-SiC solid solution.
源语言 | 英语 |
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页(从-至) | 731-732 |
页数 | 2 |
期刊 | Journal of Materials Science Letters |
卷 | 21 |
期 | 9 |
DOI | |
出版状态 | 已出版 - 1 5月 2002 |