TY - GEN
T1 - Low-temperature fabrication of bunch-shaped ZnO nanowires using an sodium hydroxide aqueous solution
AU - Hu, Xiulan
AU - Masuda, Yoshitake
AU - Ohji, Tatsuki
AU - Kato, Kazumi
PY - 2010
Y1 - 2010
N2 - By the forced-hydrolysis-initiated-nucleation of anhydrous zinc acetate, bunch-shaped ZnO nanowires film was successfully fabricated in an aqueous solution of zinc acetate and sodium hydroxide at low temperature. X-ray diffraction and a field emission scanning electron microscope clarified their formation mechanism and morphology development. The morphology was controllable by adjusting the solution temperature and deposition time. A high aspect ratio of 105 (3.17 μm in length and 30 nm in diameter) was obtained at 65 °C for 6 h. This fabrication technique indicated that ZnO film may be prepared at low cost, and fittable to low heat-resistance substrates such as a polymer substarte. The novel technique will broaden its potential applications in many fields.
AB - By the forced-hydrolysis-initiated-nucleation of anhydrous zinc acetate, bunch-shaped ZnO nanowires film was successfully fabricated in an aqueous solution of zinc acetate and sodium hydroxide at low temperature. X-ray diffraction and a field emission scanning electron microscope clarified their formation mechanism and morphology development. The morphology was controllable by adjusting the solution temperature and deposition time. A high aspect ratio of 105 (3.17 μm in length and 30 nm in diameter) was obtained at 65 °C for 6 h. This fabrication technique indicated that ZnO film may be prepared at low cost, and fittable to low heat-resistance substrates such as a polymer substarte. The novel technique will broaden its potential applications in many fields.
UR - http://www.scopus.com/inward/record.url?scp=77951653873&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5425116
DO - 10.1109/INEC.2010.5425116
M3 - 会议稿件
AN - SCOPUS:77951653873
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 943
EP - 944
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -