Memory devices using a mixture of MoS2 and graphene oxide as the active layer

Zongyou Yin; Zhiyuan Zeng; Juqing Liu; Qiyuan He; Peng Chen; Hua Zhang

doi:10.1002/smll.201201940

Memory devices using a mixture of MoS₂ and graphene oxide as the active layer

Zongyou Yin, Zhiyuan Zeng, Juqing Liu, Qiyuan He, Peng Chen, Hua Zhang

Nanyang Technological University

科研成果: 期刊稿件 › 文章 › 同行评审

147 引用（Scopus）

摘要

A mixed film consisting of 2D MoS₂ and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS₂ component in the MoS₂-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS₂-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 ²).

源语言	英语
页（从-至）	727-731
页数	5
期刊	Small
卷	9
期	5
DOI	https://doi.org/10.1002/smll.201201940
出版状态	已出版 - 11 3月 2013
已对外发布	是

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10.1002/smll.201201940

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title = "Memory devices using a mixture of MoS2 and graphene oxide as the active layer",

abstract = "A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 2).",

keywords = "data storage, graphene oxide, memory devices, molybdenum disulfide, nanosheets",

author = "Zongyou Yin and Zhiyuan Zeng and Juqing Liu and Qiyuan He and Peng Chen and Hua Zhang",

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AU - Yin, Zongyou

AU - Zeng, Zhiyuan

AU - Liu, Juqing

AU - He, Qiyuan

AU - Chen, Peng

AU - Zhang, Hua

PY - 2013/3/11

Y1 - 2013/3/11

N2 - A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 2).

AB - A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 2).

KW - data storage

KW - graphene oxide

KW - memory devices

KW - molybdenum disulfide

KW - nanosheets

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JF - Small

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ER -

Memory devices using a mixture of MoS2 and graphene oxide as the active layer

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Memory devices using a mixture of MoS₂ and graphene oxide as the active layer