Negative compressibility observed in graphene containing resonant impurities

X. L. Chen; L. Wang; W. Li; Y. Wang; Y. H. He; Z. F. Wu; Y. Han; M. W. Zhang; W. Xiong; N. Wang

doi:10.1063/1.4807394

Negative compressibility observed in graphene containing resonant impurities

X. L. Chen, L. Wang, W. Li, Y. Wang, Y. H. He, Z. F. Wu, Y. Han, M. W. Zhang, W. Xiong, N. Wang

Hong Kong University of Science and Technology

科研成果: 期刊稿件 › 文章 › 同行评审

9 引用（Scopus）

摘要

We observed negative compressibility in monolayer graphene containing resonant impurities under different magnetic fields. Hydrogenous impurities were introduced into graphene by electron beam (e-beam) irradiation. Resonant states located in the energy region of ± 0.04 eV around the charge neutrality point were probed in e-beam-irradiated graphene capacitors. Theoretical results based on tight-binding and Lifshitz models agreed well with experimental observations of graphene containing a low concentration of resonant impurities. The interaction between resonant states and Landau levels was detected by varying the applied magnetic field. The interaction mechanisms and enhancement of the negative compressibility in disordered graphene are discussed.

源语言	英语
文章编号	203103
期刊	Applied Physics Letters
卷	102
期	20
DOI	https://doi.org/10.1063/1.4807394
出版状态	已出版 - 20 5月 2013
已对外发布	是

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AU - Chen, X. L.

AU - Wang, L.

AU - Li, W.

AU - Wang, Y.

AU - He, Y. H.

AU - Wu, Z. F.

AU - Han, Y.

AU - Zhang, M. W.

AU - Xiong, W.

AU - Wang, N.

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AB - We observed negative compressibility in monolayer graphene containing resonant impurities under different magnetic fields. Hydrogenous impurities were introduced into graphene by electron beam (e-beam) irradiation. Resonant states located in the energy region of ± 0.04 eV around the charge neutrality point were probed in e-beam-irradiated graphene capacitors. Theoretical results based on tight-binding and Lifshitz models agreed well with experimental observations of graphene containing a low concentration of resonant impurities. The interaction between resonant states and Landau levels was detected by varying the applied magnetic field. The interaction mechanisms and enhancement of the negative compressibility in disordered graphene are discussed.

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Negative compressibility observed in graphene containing resonant impurities

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