TY - JOUR
T1 - Nitric Oxide Detector Based on WO 3 -1wt%In 2 O 3 -1wt%Nb 2 O 5 with State-of-the-Art Selectivity and ppb-Level Sensitivity
AU - Hu, Yewei
AU - Hu, Xuefeng
AU - Qiu, Junwen
AU - Quan, Wenjing
AU - Qin, Weiwei
AU - Min, Xinjie
AU - Lu, Shaohe
AU - Chen, Suishi
AU - Du, Wei
AU - Chen, Xiaoqiang
AU - Zhang, Wei
N1 - Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/12/12
Y1 - 2018/12/12
N2 - Fast, sensitive, and precise detection of nitric oxide (NO) is critical to many applications in environmental monitoring and early disease diagnosis via respiratory testing. An effective detection system requires a sensor to detect NO gas at the parts per billion (ppb) level, and this system should possess a high degree of anti-interference selectivity. To achieve these targets, a series of gas sensor thin films based on intrinsic WO 3 , one-additive-doped WO 3 (prepared by doping In 2 O 3 or Nb 2 O 5 ), and two-additive-doped WO 3 (synthesized by doping with In 2 O 3 and Nb 2 O 5 ) oxides were successfully grown. By analyzing the properties of sensitivity, selectivity, responsiveness, and recovery time of the gas sensors, we found that WO 3 -1wt%In 2 O 3 -1wt%Nb 2 O 5 has overwhelming advantages over intrinsic WO 3 , WO 3 -In 2 O 3 , and WO 3 -Nb 2 O 5 . A sensing response value of 2.4 was observed for NO concentrations as low as 20 ppb from the WO 3 -1wt%In 2 O 3 -1wt%Nb 2 O 5 sensor. With 100 ppb NO gas, the WO 3 -1wt%In 2 O 3 -1wt%Nb 2 O 5 sensor achieved a high response of 56.1 at 70 °C, which is a state-of-the-art performance for NO detection at low working temperature settings. WO 3 -1wt%In 2 O 3 -1wt%Nb 2 O 5 also yields significantly improved selectivity and stability over intrinsic WO 3 , WO 3 -In 2 O 3 , and WO 3 -Nb 2 O 5 . Studies on the sensing mechanism show that the grain size, rather than the n-n heterostructure effect, plays a dominant role in the observed results. By decreasing the grain size so that it is close to the thickness of the space-charge layer, the sensing response is enhanced. Although room remains to further improve the sensing properties, the performance of WO 3 -1wt%In 2 O 3 -1wt%Nb 2 O 5 is sufficient for implementation in low-content NO detection devices.
AB - Fast, sensitive, and precise detection of nitric oxide (NO) is critical to many applications in environmental monitoring and early disease diagnosis via respiratory testing. An effective detection system requires a sensor to detect NO gas at the parts per billion (ppb) level, and this system should possess a high degree of anti-interference selectivity. To achieve these targets, a series of gas sensor thin films based on intrinsic WO 3 , one-additive-doped WO 3 (prepared by doping In 2 O 3 or Nb 2 O 5 ), and two-additive-doped WO 3 (synthesized by doping with In 2 O 3 and Nb 2 O 5 ) oxides were successfully grown. By analyzing the properties of sensitivity, selectivity, responsiveness, and recovery time of the gas sensors, we found that WO 3 -1wt%In 2 O 3 -1wt%Nb 2 O 5 has overwhelming advantages over intrinsic WO 3 , WO 3 -In 2 O 3 , and WO 3 -Nb 2 O 5 . A sensing response value of 2.4 was observed for NO concentrations as low as 20 ppb from the WO 3 -1wt%In 2 O 3 -1wt%Nb 2 O 5 sensor. With 100 ppb NO gas, the WO 3 -1wt%In 2 O 3 -1wt%Nb 2 O 5 sensor achieved a high response of 56.1 at 70 °C, which is a state-of-the-art performance for NO detection at low working temperature settings. WO 3 -1wt%In 2 O 3 -1wt%Nb 2 O 5 also yields significantly improved selectivity and stability over intrinsic WO 3 , WO 3 -In 2 O 3 , and WO 3 -Nb 2 O 5 . Studies on the sensing mechanism show that the grain size, rather than the n-n heterostructure effect, plays a dominant role in the observed results. By decreasing the grain size so that it is close to the thickness of the space-charge layer, the sensing response is enhanced. Although room remains to further improve the sensing properties, the performance of WO 3 -1wt%In 2 O 3 -1wt%Nb 2 O 5 is sufficient for implementation in low-content NO detection devices.
KW - NO gas sensor
KW - codoping
KW - high selectivity
KW - limit of detection (LOD)
KW - ppb-level response
KW - pulsed laser deposition (PLD)
UR - http://www.scopus.com/inward/record.url?scp=85058078313&partnerID=8YFLogxK
U2 - 10.1021/acsami.8b14243
DO - 10.1021/acsami.8b14243
M3 - 文章
C2 - 30480999
AN - SCOPUS:85058078313
SN - 1944-8244
VL - 10
SP - 42583
EP - 42592
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 49
ER -