Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor

Jiadan Lin; Hai Li; Hua Zhang; Wei Chen

doi:10.1063/1.4807658

Plasmonic enhancement of photocurrent in MoS₂ field-effect-transistor

Jiadan Lin, Hai Li, Hua Zhang, Wei Chen

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219 引用（Scopus）

摘要

The two-dimensional material, molybdenum disulfide (MoS₂), has attracted considerable attention for numerous applications in optoelectronics. Here, we demonstrate a plasmonic enhancement of photocurrent in MoS₂ field-effect-transistor decorated with gold nanoparticles, with significantly enhanced photocurrent peaked at the plasmon resonant wavelength around 540 nm. Our findings offer a possibility to realize wavelength selectable photodetection in MoS₂ based phototransistors.

源语言	英语
文章编号	203109
期刊	Applied Physics Letters
卷	102
期	20
DOI	https://doi.org/10.1063/1.4807658
出版状态	已出版 - 20 5月 2013
已对外发布	是

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Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor

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Plasmonic enhancement of photocurrent in MoS₂ field-effect-transistor