Polymer-carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

Hang Lu; Yingying Chen; Qing Chang; Shuai Cheng; Yamei Ding; Jie Chen; Fei Xiu; Xiangjing Wang; Chaoyi Ban; Zhengdong Liu; Juqing Liu; Wei Huang

doi:10.1039/c8ra01928b

Polymer-carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

Hang Lu, Yingying Chen, Qing Chang, Shuai Cheng, Yamei Ding, Jie Chen, Fei Xiu, Xiangjing Wang, Chaoyi Ban, Zhengdong Liu, Juqing Liu, Wei Huang

柔性电子（未来科技）学院|先进材料研究院

Nanjing Tech University

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

A strategy for self-rectifying memory diodes based on a polymer-carbon dot hybrid structure, with a configuration of rGO/PEDOT:PSS/carbon dots/MEH-PPV/Al, has been proposed. The fabricated device exhibits a rectification of 10³ in the rectification model and an ON/OFF current ratio of 121 in the memory model. The rectifying behavior was attributed to an energy level offset between the electrodes and the bilayer polymers and the memory effect was induced by carrier trapping of carbon dots within the polymers.

源语言	英语
页（从-至）	13917-13920
页数	4
期刊	RSC Advances
卷	8
期	25
DOI	https://doi.org/10.1039/c8ra01928b
出版状态	已出版 - 2018

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abstract = "A strategy for self-rectifying memory diodes based on a polymer-carbon dot hybrid structure, with a configuration of rGO/PEDOT:PSS/carbon dots/MEH-PPV/Al, has been proposed. The fabricated device exhibits a rectification of 103 in the rectification model and an ON/OFF current ratio of 121 in the memory model. The rectifying behavior was attributed to an energy level offset between the electrodes and the bilayer polymers and the memory effect was induced by carrier trapping of carbon dots within the polymers.",

author = "Hang Lu and Yingying Chen and Qing Chang and Shuai Cheng and Yamei Ding and Jie Chen and Fei Xiu and Xiangjing Wang and Chaoyi Ban and Zhengdong Liu and Juqing Liu and Wei Huang",

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doi = "10.1039/c8ra01928b",

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T1 - Polymer-carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

AU - Lu, Hang

AU - Chen, Yingying

AU - Chang, Qing

AU - Cheng, Shuai

AU - Ding, Yamei

AU - Chen, Jie

AU - Xiu, Fei

AU - Wang, Xiangjing

AU - Ban, Chaoyi

AU - Liu, Zhengdong

AU - Liu, Juqing

AU - Huang, Wei

PY - 2018

Y1 - 2018

N2 - A strategy for self-rectifying memory diodes based on a polymer-carbon dot hybrid structure, with a configuration of rGO/PEDOT:PSS/carbon dots/MEH-PPV/Al, has been proposed. The fabricated device exhibits a rectification of 103 in the rectification model and an ON/OFF current ratio of 121 in the memory model. The rectifying behavior was attributed to an energy level offset between the electrodes and the bilayer polymers and the memory effect was induced by carrier trapping of carbon dots within the polymers.

AB - A strategy for self-rectifying memory diodes based on a polymer-carbon dot hybrid structure, with a configuration of rGO/PEDOT:PSS/carbon dots/MEH-PPV/Al, has been proposed. The fabricated device exhibits a rectification of 103 in the rectification model and an ON/OFF current ratio of 121 in the memory model. The rectifying behavior was attributed to an energy level offset between the electrodes and the bilayer polymers and the memory effect was induced by carrier trapping of carbon dots within the polymers.

UR - http://www.scopus.com/inward/record.url?scp=85045693069&partnerID=8YFLogxK

U2 - 10.1039/c8ra01928b

DO - 10.1039/c8ra01928b

M3 - 文章

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SN - 2046-2069

VL - 8

SP - 13917

EP - 13920

JO - RSC Advances

JF - RSC Advances

IS - 25

ER -

Polymer-carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

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