Reduced Graphene Oxide Electrodes with Wrinkled Surface for Nonvolatile Polymer Memory Device Compatibility

A general strategy for high performance nonvolatile polymer memory devices, with wrinkled reduced graphene oxide (rGO) films as electrodes and common insulating polymers as active layers, is proposed. The fabricated device exhibits electrical bistability and nonvolatile write-once-read-many times-type memory, with a low switching voltage of 2.7 V, high ON/OFF ratio of 10⁴ and desirable long retention time over 10⁴ s. The resistive switching of the device might be attributed to carbon-rich filaments induced by the wrinkled rGO surface. Moreover, this polymer memory device based on a wrinkled rGO electrode can be further applied to flexible data storage systems. The strategy combining such advances in polymer memory devices with simple structure, common materials, excellent reproducibility, and high performance will demonstrate great potential in permanent archival storage applications.